Datasheet > RM35P100LD

RM35P100LD

更新时间： 2024-06-27 12:11:57

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
7页	1662K
描述
Vdss (V) : 100 V;Id @ 25C (A) : 35 A;Rds-on (typ) (mOhms) : 40 mOhms;Total Gate Charge (nQ) typ : 40 nQ;Maximum Power Dissipation (W) : 140 W;Vgs(th) (typ) : 1.6 V;Input Capacitance (Ciss) : 2120 pF;Polarity : P-Channel;Mounting Style : Through Hole;Package / Case : TO-252(D-PAK)

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RM35P100LD 数据手册

RM35P100LD

P-Channel Enhancement Mosfet

Features

⚫ -100V, -35A

R_{DS ON}_）<52mΩ＠V_GS=-10V TYP:40mΩ

（

R_{DS ON}_）<62mΩ＠V_GS=-4.5V TYP:44mΩ

（

⚫ Advanced Split Gate Trench Technology

⚫ Excellent RDS(ON) and Low Gate Charge

⚫ Lead free product is acquired

Applications

⚫ Load Switch

⚫ PWM Application

⚫ Power management

Halogen-free

ꢀ

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity (PCS)

RM35P100LD

35P100

TO-252

13inch

2500

ABSOLUTE MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

Parameter

Symbol

V_DS

V_GS

I_D

Value

-100

±20

-35

Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T_C=25℃)

Continuous Drain Current (T_C=100℃)

Pulsed Drain Current ⁽¹⁾

I_D

-23

I_DM

-140

Single Pulsed Avalanche Energy ⁽²⁾

E_AS

P_D

Drain Power Dissipation

140

Thermal Resistance from Junction to Case⁽²⁾

Junction Temperature

R_θJC

T_J

1.1

℃/W

℃

150

Storage Temperature

T_STG

-55~ +150

2022-07/59

REV:O

12 3 4 5 6 7

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