RM1800E

更新时间： 2024-11-18 03:36:35

品牌	Logo	应用领域
美微科 - MCC		高压
页数	文件大小	规格书
3页	72K
描述
500 Milliamp High Voltage Silicon Rectifier 1200 to 2000 Volts

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中文翻译

获取价格

数据手册

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RM1800E 数据手册

RM1200E

THRU

RM2000E

M C C

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

Micro Commercial Components

500 Milliamp

High Voltage

Silicon Rectifier

1200 to 2000 Volts

Features

•

Low Cost

Low Leakage

Low Forward Voltage Drop

High Current Capability

High Voltage

Case Material: Molded Plastic. UL Flammability

Classification Rating 94V-0

•

DO-214AC

(SMAE)

Maximum Ratings

•

Operating Temperature: -55°C to +150°C

Storage Temperature: -55°C to +150°C

Cathode Band

MCC

Catalog

Number

Device

Marking

Maximum

Recurrent

Peak Reverse

Voltage

Maximum Maximum

RMS

Voltage

Blocking

Voltage

1200V

1500V

1800V

2000V

RM1200E

RM1500E

RM1800E

RM2000E

RM12

RM15

RM18

RM20

1200V

1500V

1800V

2000V

840V

1050V

1260V

1400V

DIMENSIONS

Electrical Characteristics @ 25°C Unless Otherwise Specified

INCHES

MIN

.079

.050

.002

---

MIN

DIM

MAX

.096

.075

.008

.02

MAX

2.44

1.90

.20

NOTE

Average Forward

Current

I_F(AV)

500mA

T_A= 50°C

2.01

1.27

.05

---

.51

Peak Forward Surge

Current

I_FSM

30A

8.3ms, half sine

.030

.189

.157

.090

.060

.208

.180

.115

.76

1.52

5.30

4.57

2.92

4.80

4.00

2.29

Maximum

Instantaneous

Forward Voltage

RM1200E-RM1800E

RM2000E

Maximum DC

Reverse Current At

Rated DC Blocking

Voltage

SUGGESTED SOLDER

PAD LAYOUT

0.090”

V_F

I_R

2.0V

3.0V

I_FM= 0.5A;

T_A= 50°C

5.0µA

50µA

T_A= 25°C

T_A= 100°C

0.085”

Typical Junction

Capacitance

C_J

30pF

Measured at

1.0MHz, V_R=4.0V

0.070”

www.mccsemi.com

Revision: 1

2007/01/26

1 of 3

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中文翻译

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