Datasheet > RM180N60T2

RM180N60T2

更新时间： 2024-11-22 18:09:47

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
7页	203K
描述
Vdss (V) : 60 V;Id @ 25C (A) : 180 A;Rds-on (typ) (mOhms) : 2.5 mOhms;Total Gate Charge (nQ) typ : 70 nQ;Maximum Power Dissipation (W) : 220 W;Vgs(th) (typ) : 2.8 V;Input Capacitance (Ciss) : 4500 pF;Polarity : N-Channel;Mounting Style : Through Hole;Package / Case : TO-220

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RM180N60T2 数据手册

RM180N60T2

N-ChannelSuper Trench Power MOSFET

Description

The RM180N60T2 uses Super Trench technology that is

uniquely optimized to provide the most efficient high

frequency switching performance. Both conduction and

switching power losses are minimized due to an extremely

low combination of R_DS(ON)and Q_g. This device is ideal for

high-frequency switching and synchronous rectification.

General Features

Schematic diagram

ƽ V_DS=60V,I_D=180A

R_DS(ON)< 2.9mꢀ @ V_GS=10V (Typ:2.5mꢀ)

ƽ Excellent gate charge x R_DS(on)product

ƽ Very low on-resistance R_DS(on)

ƽ 150 °C operating temperature

ƽ Pb-free lead plating

ƽ 100% UIS tested

Application

ƽ DC/DC Converter

TO-220-3L top view

ƽ Ideal for high-frequency switching and

synchronous

Halogen-free

rectification

100% UIS TESTED!

100% ꢀVds TESTED!

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

180N60

RM180N60T2

TO-220-3L

Absolute Maximum Ratings (T_C=25ććunless otherwise noted)

Parameter

Symbol

V^DS

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

V^GS

Drain Current-Continuous (Silicon Limited)

Drain Current-Continuous(T_C=100ć)

Pulsed Drain Current

180

126

I_D

I_D(100ć)

720

I_DM

Maximum Power Dissipation

220

P_D

Derating factor

Single pulse avalanche energy ^{(Note 5)}

1.47

W/ć

E_AS

1036

-55 To 175

Operating Junction and Storage Temperature Range

T_J,T_STG

Thermal Characteristic

Thermal Resistance,Junction-to-Case^{(Note 2)}

R_ꢁJC

0.68

ć/W

2020-05/15

REV:O

12 3 4 5 6 7

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