Datasheet > RM18N600LD

RM18N600LD

更新时间： 2024-10-15 18:09:31

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
7页	1460K
描述
Vdss (V) : 600 V;Id @ 25C (A) : 18 A;Rds-on (typ) (mOhms) : 180 mOhms;Total Gate Charge (nQ) typ : 22.8 nQ;Maximum Power Dissipation (W) : 150 W;Vgs(th) (typ) : 4.2 V;Input Capacitance (Ciss) : 1157 pF;Polarity : N-Channel;Mounting Style : Through Hole;Package / Case : TO-252(D-PAK)

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RM18N600LD 数据手册

RM18N600LD

N-Channel Super Junction Power MOSFET Ⅳ

General Description

The series of devices use advanced trench gate super

junction technology and design to provide excellent RDS(ON)

with low gate charge. This super junction MOSFET fits the

industry’s AC-DC SMPS requirements for PFC, AC/DC

power conversion, and industrial power applications.

V_{DS min@Tjmax}

R_DS(ON)TYP

650

180

mΩ

22.8

Features

●Optimized body diode reverse recovery performance

●Low on-resistance and low conduction losses

●Small package

●Ultra Low Gate Charge cause lower driving requirements

●100% Avalanche Tested

●ROHS compliant

Application

● Power factor correction（PFC）

● Switched mode power supplies(SMPS)

● Uninterruptible Power Supply（UPS）

● LLC Half-bridge

●

Halogen-free

Package Marking And Ordering Information

Device

Device Package

Marking

RM18N600LD

TO-252

18N600

TO-252

Table 1. Absolute Maximum Ratings (T_C=25℃)

Parameter

Symbol

VDS

Value

600

Unit

Drain-Source Voltage (VGS=0V）

Gate-Source Voltage (VDS=0V) AC (f>1 Hz)

Gate-Source Voltage (VDS=0V) DC

Continuous Drain Current at Tc=25°C

Continuous Drain Current at Tc=100°C

Pulsed drain current ^{(Note 1)}

±30

±20

VGS

I_{D (DC)}

I_{DM (pluse)}

P_D

12.6

Maximum Power Dissipation(Tc=25°C)

Derate above 25°C

150

1.0

W/°C

Avalanche current^{(Note 1)}

3.5

I_AS

Drain Source voltage slope, V_DS≤480 V,

Reverse diode dv/dt，V_DS≤480 V,I_SD<I_D

Operating Junction and Storage Temperature Range

* limited by maximum junction temperature

dv/dt

T_J,T_STG

V/ns

°C

-55...+175

2024-05/15

REV:O

12 3 4 5 6 7

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