Datasheet > RM185N30DF

RM185N30DF

更新时间： 2024-11-19 18:10:07

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
6页	239K
描述
Vdss (V) : 30 V;Id @ 25C (A) : 185 A;Rds-on (typ) (mOhms) : 1.1 mOhms;Total Gate Charge (nQ) typ : 125 nQ;Maximum Power Dissipation (W) : 95 W;Vgs(th) (typ) : 1.5 V;Input Capacitance (Ciss) : 7350 pF;Polarity : N-Channel;Mounting Style : SMD/SMT;Package / Case : DFN5X6-8L

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RM185N30DF 数据手册

RM185N30DF

N-Channel Super Trench Power MOSFET

Description

Super Trench technology that is

The RM185N30DF uses

uniquely optimized to provide the most efficient high

frequency switching performance. Both conduction and

switching power losses are minimized due to an extremely

low combination of R_DS(ON)and Q_g. This device is ideal for

high-frequency switching and synchronous rectification.

General Features

ƽ V_DS=30V,I_D=185A

Schematic Diagram

R_DS(ON)=1.1mꢀ (typical) @ V_GS=10V

_DS(ON)=1.45mꢀ (typical) @ V_GS=4.5V

ƽ Excellent gate charge x R_DS(on)product(FOM)

ƽ Very low on-resistance R_DS(on)

ƽ 150 °C operating temperature

ƽ Pb-free lead plating

ƽ 100% UIS tested

Top View

Bottom View

Application

ƽ DC/DC Converter

ƽ Ideal for high-frequency switching and synchronous

100% UIS TESTED!

100% ꢀVds TESTED!

rectification

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

RM185N30DF

DFN5X6-8L

185N30

Absolute Maximum Ratings (T_C=25ććunless otherwise noted)

Parameter

Symbol

V^DS

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

±±0

V^GS

Drain Current-Continuous (Silicon Limited)

Drain Current-Continuous(T_C=100ć)

Pulsed Drain Current (Package Limited)

Maximum Power Dissipation

185

140

I_D

I_D(100ć)

400

I_DM

P_D

Derating factor

Single pulse avalanche energy ^{(Note 5)}

0.76

W/ć

E_AS

1300

-55 To 150

Operating Junction and Storage Temperature Range

T_J,T_STG

±016-1±

REV:O15

12 3 4 5 6

中文翻译

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与RM185N30DF相关器件

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RM195N150T2	RECTRON	获取价格	Vdss (V) : 150 V;Id @ 25C (A) : 195 A;Rds-on (typ) (mOhms) : 4.1 mOhms;Total Gate Charge (