Datasheet > RM18N200T2

RM18N200T2

更新时间： 2024-09-14 18:05:03

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
8页	214K
描述
Vdss (V) : 200V;Id @ 25C (A) : 18 A;Rds-on (typ) (mOhms) : 95 mOhms;Total Gate Charge (nQ) typ : 9.8 nQ;Maximum Power Dissipation (W) : 88 W;Vgs(th) (typ) : 2.1 V;Input Capacitance (Ciss) : 491 pF;Polarity : N-Channel;Mounting Style : Through Hole;Package / Case : TO-220

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RM18N200T2 数据手册

RM18N200HD

RM18N200T2

RM18N200TI

N-Channel Super Junction Power MOSFET

General Description

The series of devices use advanced super junction

technology and design to provide excellent R^DS(ON)with low

gate charge. This super junction MOSFET fits the industry’s

AC-DC SMPS requirements for PFC, AC/DC power

conversion, and industrial power applications.

Features

V^DS

=200V , I

_D=18A ,

_VGS=10V , RDS(on)<120mΩ ,

V^GS

=4.5V, R^DS(on)<140mΩ

New technology for high voltage device

Low on-resistance and low conduction losses

Small package

Schematic diagram

Ultra Low Gate Charge cause lower driving requirements

100% Avalanche Tested

ROHS compliant

Halogen-free

Application

Power factor correction PFC

Switched mode power supplies(SMPS)

Uninterruptible Power Supply UPS

TO-263

TO-220

TO-220F

Package Marking And Ordering Information

Device

Device Package

Marking

18N200

RM18N200HD

RM18N200T2

RM18N200TI

TO-263

TO-220

TO-220F

Table 1. Absolute Maximum Ratings (T_C=25 )

Parameter

Symbol

Unit

200

Drain-Source Voltage (VGS=0V

Gate-Source Voltage (VDS=0V)

V^DS

VGS

Continuous Drain Current at Tc=25°C

18.2

12.8

I_{D (DC)}

I_{DM (pluse)}

Continuous Drain Current at Tc=100°C

(Note 1)

Pulsed drain current

Maximum Power Dissipation(Tc=25

)

P_D

EAS

T_J,T_STG

Single pulse avalanche energy ^{(Note 2)}

Operating Junction and Storage Temperature Range

°C

-55 to 170

* limited by maximum junction temperature

2019-06/69

REV:O

12 3 4 5 6 7 8

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