Datasheet > RM180N100T2

RM180N100T2

更新时间： 2024-10-15 18:09:39

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
7页	389K
描述
Vdss (V) : 100 V;Id @ 25C (A) : 180 A;Rds-on (typ) (mOhms) : 3.0 mOhms;Total Gate Charge (nQ) typ : 160 nQ;Maximum Power Dissipation (W) : 300 W;Vgs(th) (typ) : 3.5 V;Input Capacitance (Ciss) : 11500 pF;Polarity : N-Channel;Mounting Style : Through Hole;Package / Case : TO-220

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RM180N100T2 数据手册

RM180N100T2

N-Channel Super Trench

Power MOSFET

Description

The RM180N100T2 uses Super Trench technology that is

uniquely optimized to provide the most efficient high

frequency switching performance. Both conduction and

switching power losses are minimized due to an extremely

low combination of R_DS(ON)and Q_g. This device is ideal for

high-frequency switching and synchronous rectification.

Schematic diagram

General Features

ƽ V_DS=100V,I_D=180A

R_DS(ON)<3.0mΩ @ V_GS=10V

ƽ Excellent gate charge x R_DS(on)product(FOM)

ƽ Very low on-resistance R_DS(on)

ƽ 175 °C operating temperature

ƽ Pb-free lead plating

ƽ 100% UIS tested

Marking and pin assignment

Application

ƽ DC/DC Converter

ƽ Ideal for high-frequency switching and synchronous

rectification

100% UIS TESTED!

TO-220-3L top view

100% ∆Vds TESTED!

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

180N100

RM180N100T2

TO-220-3L

Absolute Maximum Ratings (T_C=25ćunless otherwise noted)

Parameter

Symbol

Limit

100

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

V^DS

±20

V^GS

180

128

720

300

I_D

Drain Current-Continuous(T_C=100ć)

Pulsed Drain Current

I_D(100ć)

I_DM

Maximum Power Dissipation

P_D

Derating factor

Single pulse avalanche energy^{(Note 5)}

W/ć

E_AS

1000

Operating Junction and Storage Temperature Range

-55 To 175

T_J,T_STG

2017-03

REV:O15

12 3 4 5 6 7

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