品牌 | Logo | 应用领域 |
三菱 - MITSUBISHI | 高功率电源 | |
页数 | 文件大小 | 规格书 |
3页 | 47K | |
描述 | ||
HIGH POWER GENERAL USE INSULATED TYPE |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
RM100DZ-24 | MITSUBISHI |
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HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE | |
RM100DZ-2H | MITSUBISHI |
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HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE | |
RM100DZ-H | MITSUBISHI |
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HIGH POWER GENERAL USE INSULATED TYPE | |
RM100DZ-M | MITSUBISHI |
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HIGH POWER GENERAL USE INSULATED TYPE | |
RM100HA-20F | MITSUBISHI |
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Rectifier Diode, 1 Phase, 1 Element, 100A, 1000V V(RRM), Silicon, | |
RM100HA-24F | MITSUBISHI |
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Rectifier Diode, 1 Phase, 1 Element, 100A, 1200V V(RRM), Silicon, | |
RM100HA-XXF | MITSUBISHI |
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HIGH SPEED SWITCHING USE INSULATED TYPE | |
RM100N30DF | RECTRON |
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Vdss (V) : 30 V;Id @ 25C (A) : 100.0 A;Rds-on (typ) (mOhms) : 2.6 mOhms;Total Gate Charge | |
RM100N40DF | RECTRON |
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Vdss (V) : 40 V;Id @ 25C (A) : 100.0 A;Rds-on (typ) (mOhms) : 3.0 mOhms;Total Gate Charge | |
RM100N60AT2 | RECTRON |
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Vdss (V) : 60 V;Id @ 25C (A) : 100 A;Rds-on (typ) (mOhms) : 5.7 mOhms;Total Gate Charge (n |