Datasheet > RM100N30DF

RM100N30DF

更新时间： 2024-11-21 18:10:03

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
9页	728K
描述
Vdss (V) : 30 V;Id @ 25C (A) : 100.0 A;Rds-on (typ) (mOhms) : 2.6 mOhms;Total Gate Charge (nQ) typ : 68 nQ;Maximum Power Dissipation (W) : 55 W;Vgs(th) (typ) : 1.5 V;Input Capacitance (Ciss) : 3300 pF;Polarity : N-Channel;Mounting Style : SMD/SMT;Package / Case : DFN5X6-8L

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中文翻译

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RM100N30DF 数据手册

RM100N30DF

N-Channel Enhancement Mode Power MOSFET

Description

The RM100N30DF uses advanced trench technology and

design to provide excellent R_DS(ON)with low gate charge. It

can be used in a wide variety of applications.

General Features

ƽ V_DS=30V,I_D=100A

Schematic diagram

R_DS(ON)<2.6 m @ V _GS=10V

ƽ High density cell design for ultra low Rdson

ƽ Fully characterized avalanche voltage and current

ƽ Good stability and uniformity with high E_AS

ƽ Excellent package for good heat dissipation

ƽ Special process technology for high ESD capability

Marking and pin assignment

Application

ƽ Power switching application

ƽ Hard switched and high frequency circuits

ƽ Uninterruptible power supply

Halogen-free

DFN5X6-8L top view

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

RM100N30DF

100N30

DFN5X6-8L

Absolute Maximum Ratings (T_C=25ććunless otherwise noted)

Parameter

Symbol

V^DS

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

V^GS

100

I_D

Drain Current-Continuous(T_C=100ć)

Pulsed Drain Current

I_D(100ć )

300

I_DM

P_D

Maximum Power Dissipation

Derating factor

0.43

W/ć

Operating Junction and Storage Temperature Range

-55 To 150

T_J,T_STG

2023-02/15

REV:D

12 3 4 5 6 7...9

中文翻译

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