Datasheet > RM100N65DF

RM100N65DF

更新时间： 2024-10-15 18:09:31

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
7页	252K
描述
Vdss (V) : 65 V;Id @ 25C (A) : 100 A;Rds-on (typ) (mOhms) : 2.3 mOhms;Total Gate Charge (nQ) typ : 59 nQ;Maximum Power Dissipation (W) : 142 W;Vgs(th) (typ) : 1.6 V;Input Capacitance (Ciss) : 4780 pF;Polarity : N-Channel;Mounting Style : SMD/SMT;Package / Case : DFN5X6-8L

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RM100N65DF 数据手册

RM100N65DF

N-Channel Enhancement Mode Power MOSFET

Description

The RM100N65DF uses advanced trench technology and

design to provide excellent R_DS(ON)with low gate charge. It

can be used in a wide variety of applications.

General Features

V_DS=65V,I_D=100A

Schematic diagram

R_DS(ON)

_GS=10V

_GS=4.5V

2.8

5.4

High density cell design for ultra low Rdson

Fully characterized avalanche voltage and current

Good stability and uniformity with high E_AS

Excellent package for good heat dissipation

Special process technology for high ESD capability

Marking and pin assignment

Application

Power switching application

Hard switched and high frequency circuits

Uninterruptible power supply

Halogen-free

DFN5X6-8L top view

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

RM100N65DF

AN65

DFN5X6-8L

Absolute Maximum Ratings (T_C=25 unless otherwise noted)

Parameter

Symbol

V^DS

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

+20/-12

V^GS

100

I_D

I_D(100

Drain Current-Continuous(T_C=100

Pulsed Drain Current

)

400

142

1.14

I_DM

P_D

Maximum Power Dissipation

Derating factor

Operating Junction and Storage Temperature Range

-55 To 150

T_J,T_STG

2019-05/57

REV:B

12 3 4 5 6 7

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