Datasheet > RM100N60BT2

RM100N60BT2

更新时间： 2024-10-15 18:09:59

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
6页	1435K
描述
Vdss (V) : 60 V;Id @ 25C (A) : 100 A;Rds-on (typ) (mOhms) : 6.3 mOhms;Total Gate Charge (nQ) typ : 81 nQ;Maximum Power Dissipation (W) : 167 W;Vgs(th) (typ) : 3.0 V;Input Capacitance (Ciss) : 4382 pF;Polarity : N-Channel;Mounting Style : Through Hole;Package / Case : TO-220

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RM100N60BT2 数据手册

RM100N60BT2

N-Channel Enhancement Mode Power MOSFET

Description

The RM100N60BT2 uses advanced trench technology and

design to provide excellent R_DS(ON)with low gate charge. It

can be used in a wide variety of applications.

General Feature

ƽ V_DS=60V,I_D=100A

R_DS(ON)< 7.4mΩ @ V_GS=10V (Typ:6.3mΩ)

Schematic diagram

ƽ Special process technology for high ESD capability

ƽ High density cell design for ultra low Rdson

ƽ Fully characterized Avalanche voltage and current

ƽ Good stability and uniformity with high E_AS

ƽ Excellent package for good heat dissipation

Application

ƽ Power switching application

ƽ Hard switched and high frequency circuits

ƽ Uninterruptible power supply

Halogen-free

TO-220-3L top view

100% UIS TESTED!

100% ∆Vds TESTED!

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

-ꢀ

RM100N60BT2

ꢀ

100N60

TO-220-3L

Absolute Maximum Ratings (T_C=25ćunless otherwise noted)

Parameter

Symbol

V_DS

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

V_GS

±±0

T_C=±5°C

T_C=70°C

T_A=±5°C

T_A=70°C

100⁽³⁾

Continuous Drain Current

I_D

Drain Current-Pulsed Note 1

Avalanche Current, L=0.1mH

Avalanche Energy, L=0.1mH

I_DM

I_AS

E_AS, E_AR

350

400

167

107

1.3

T_C=±5°C

T_C=70°C

T_A=±5°C

T_A=70°C

Maximum Power Dissipation

P_D

Storage Temperature Range

Operating Junction Temperature Range

T_STG

T_J

-55 to +150

°C

2022-02/114

REV:O

12 3 4 5 6

中文翻译

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