Datasheet > RM100N40DF

RM100N40DF

更新时间： 2024-11-25 18:09:43

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
8页	2081K
描述
Vdss (V) : 40 V;Id @ 25C (A) : 100.0 A;Rds-on (typ) (mOhms) : 3.0 mOhms;Total Gate Charge (nQ) typ : 90 nQ;Maximum Power Dissipation (W) : 65 W;Vgs(th) (typ) : 1.9 V;Input Capacitance (Ciss) : 5000 pF;Polarity : N-Channel;Mounting Style : SMD/SMT;Package / Case : DFN5X6-8L

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RM100N40DF 数据手册

RM100N40DF

N-Channel Enhancement Mode Power MOSFET

Description

The RM100N40DF uses advanced trench technology and

design to provide excellent R_DS(ON)with low gate charge. It

can be used in a wide variety of applications.

General Features

ƽ V_DS=40V,I_D=100A

Schematic diagram

R_DS(ON)<3.2 mΩ @ V_GS=10V

R_DS(ON)<4.6 mΩ @ V_GS=4.5V

ƽ High density cell design for ultra low Rdson

ƽ Fully characterized avalanche voltage and current

ƽ Good stability and uniformity with high E_AS

ƽ Excellent package for good heat dissipation

ƽ Special process technology for high ESD capability

Marking and pin assignment

Application

ƽ Load switching

ƽ Hard switched and high frequency circuits

ƽ Uninterruptible power supply

Halogen-free

DFN5X6-8L top view

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

DFN5X6-8L

RM100N40DF

100N40

Absolute Maximum Ratings (T_C=25ćunless otherwise noted)

R_θJA

℃/W

Thermal Resistance- Junction to Ambient

2022-11/59

REV:B

12 3 4 5 6 7 8

中文翻译

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与RM100N40DF相关器件

型号	品牌	获取价格	描述	数据表
RM100N60AT2	RECTRON	获取价格	Vdss (V) : 60 V;Id @ 25C (A) : 100 A;Rds-on (typ) (mOhms) : 5.7 mOhms;Total Gate Charge (n
RM100N60BT2	RECTRON	获取价格	Vdss (V) : 60 V;Id @ 25C (A) : 100 A;Rds-on (typ) (mOhms) : 6.3 mOhms;Total Gate Charge (n
RM100N60DF	RECTRON	获取价格	Vdss (V) : 60 V;Id @ 25C (A) : 100 A;Rds-on (typ) (mOhms) : 5.7 mOhms;Total Gate Charge (n
RM100N60DFV	RECTRON	获取价格	Vdss (V) : 65 V;Id @ 25C (A) : 95 A;Rds-on (typ) (mOhms) : 3.8 mOhms;Total Gate Charge (nQ
RM100N60HD	RECTRON	获取价格	Vdss (V) : 60 V;Id @ 25C (A) : 100 A;Rds-on (typ) (mOhms) : 5.7 mOhms;Total Gate Charge (n
RM100N60LD	RECTRON	获取价格	Vdss (V) : 65 V;Id @ 25C (A) : 100 A;Rds-on (typ) (mOhms) : 4.8 mOhms;Total Gate Charge (n
RM100N60T2	RECTRON	获取价格	Vdss (V) : 60 V;Id @ 25C (A) : 100 A;Rds-on (typ) (mOhms) : 5.7 mOhms;Total Gate Charge (n
RM100N60T7	RECTRON	获取价格	Vdss (V) : 60 V;Id @ 25C (A) : 100 A;Rds-on (typ) (mOhms) : 5.7 mOhms;Total Gate Charge (n
RM100N65DF	RECTRON	获取价格	Vdss (V) : 65 V;Id @ 25C (A) : 100 A;Rds-on (typ) (mOhms) : 2.3 mOhms;Total Gate Charge (n
RM100SZ-6R	MITSUBISHI	获取价格	MEDIUM POWER GENERAL USE NON-INSULATED TYPE