Datasheet > RM100N60DF

RM100N60DF

更新时间： 2024-11-21 18:09:27

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
6页	153K
描述
Vdss (V) : 60 V;Id @ 25C (A) : 100 A;Rds-on (typ) (mOhms) : 5.7 mOhms;Total Gate Charge (nQ) typ : 85 nQ;Maximum Power Dissipation (W) : 170 W;Vgs(th) (typ) : 3 V;Input Capacitance (Ciss) : 4800 pF;Polarity : N-Channel;Mounting Style : SMD/SMT;Package / Case : DFN5X6-8L

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RM100N60DF 数据手册

RM100N60DF

N-Channel Enhancement Mode Power MOSFET

Description

The RM100N60DF uses advanced trench technology and

design to provide excellent R_DS(ON)with low gate charge. It

can be used in a wide variety of applications.

General Feature

ƽ V_DS=65V,I_D=95A

R_DS(ON)< 4.6mΩ @ V_GS=10V (Typ:3.8mΩ)

R_DS(ON)< 7mΩ @ V_GS=4.5V (Typ:5.6mΩ)

ƽ Special process technology for high ESD capability

ƽ High density cell design for ultra low Rdson

ƽ Fully characterized Avalanche voltage and current

ƽ Good stability and uniformity with high E_AS

ƽ Excellent package for good heat dissipation

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Application

ƽ Power switching application

ƽ Hard switched and high frequency circuits

ƽ Uninterruptible power supply

Halogen-free

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100% UIS TESTED!

100% ∆Vds TESTED!

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

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RM100N60DF

DFN5X6-8L

AN60

Absolute Maximum Ratings (T_C=25ćunless otherwise noted)

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与RM100N60DF相关器件

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RM100N60DFV	RECTRON	获取价格	Vdss (V) : 65 V;Id @ 25C (A) : 95 A;Rds-on (typ) (mOhms) : 3.8 mOhms;Total Gate Charge (nQ
RM100N60HD	RECTRON	获取价格	Vdss (V) : 60 V;Id @ 25C (A) : 100 A;Rds-on (typ) (mOhms) : 5.7 mOhms;Total Gate Charge (n
RM100N60LD	RECTRON	获取价格	Vdss (V) : 65 V;Id @ 25C (A) : 100 A;Rds-on (typ) (mOhms) : 4.8 mOhms;Total Gate Charge (n
RM100N60T2	RECTRON	获取价格	Vdss (V) : 60 V;Id @ 25C (A) : 100 A;Rds-on (typ) (mOhms) : 5.7 mOhms;Total Gate Charge (n
RM100N60T7	RECTRON	获取价格	Vdss (V) : 60 V;Id @ 25C (A) : 100 A;Rds-on (typ) (mOhms) : 5.7 mOhms;Total Gate Charge (n
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