Datasheet > RM100N60DFV

RM100N60DFV

更新时间： 2024-06-27 12:11:52

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
6页	218K
描述
Vdss (V) : 65 V;Id @ 25C (A) : 95 A;Rds-on (typ) (mOhms) : 3.8 mOhms;Total Gate Charge (nQ) typ :

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RM100N60DFV 数据手册

RM100N60DFV

N-Channel Enhancement Mode Power MOSFET

Description

The RM100N60DFV uses advanced trench technology and

design to provide excellent R_DS(ON)with low gate charge. It

can be used in a wide variety of applications.

General Feature

ƽ V_DS=65V,I_D=95A

R_DS(ON)< 4.6mΩ @ V_GS=10V (Typ:3.8mΩ)

R_DS(ON)< 7mΩ @ V_GS=4.5V (Typ:5.6mΩ)

ƽ Special process technology for high ESD capability

ƽ High density cell design for ultra low Rdson

ƽ Fully characterized Avalanche voltage and current

ƽ Good stability and uniformity with high E_AS

ƽ Excellent package for good heat dissipation

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Application

ƽ Power switching application

ƽ Hard switched and high frequency circuits

ƽ Uninterruptible power supply

Halogen-free

P/N suffix V means AEC-Q101 qualified, e.g:RM100N60DFV

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100% UIS TESTED!

100% ∆Vds TESTED!

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

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RM100N60DFV

DFN5X6-8L

AN60

Absolute Maximum Ratings (T_C=25ćunless otherwise noted)

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2022-07/15/101

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中文翻译

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