Datasheet > RM100N60LD

RM100N60LD

更新时间： 2024-11-21 18:09:23

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
7页	378K
描述
Vdss (V) : 65 V;Id @ 25C (A) : 100 A;Rds-on (typ) (mOhms) : 4.8 mOhms;Total Gate Charge (nQ) typ : 36 nQ;Maximum Power Dissipation (W) : 50 W;Input Capacitance (Ciss) : 2007 pF;Polarity : N-Channel;Mounting Style : Through Hole;Package / Case : TO-252(D-PAK)

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RM100N60LD 数据手册

RM100N60LD

N-Channel Enhancement Mode Power MOSFET

Description

The RM100N60LD uses advanced trench technology and

design to provide excellent R_DS(ON)with low gate charge. It

can be used in a wide variety of applications.

General Features

ƽ V_DS=65V,I_D=100A

R_DS(ON)<5.5mΩ @ V_GS=10V

ƽ High density cell design for ultra low Rdson

Schematic diagram

ƽ Fully characterized avalanche voltage and current

ƽ Good stability and uniformity with high E_AS

ƽ Excellent package for good heat dissipation

ƽ Special process technology for high ESD capability

Application

ƽ Loadꢀswitching

ƽ Hard switched and high frequency circuits

ƽ Uninterruptible power supply

ƽ Halogen-free

100% UIS TESTED!

TO-252-2L top view

100% ∆Vds TESTED!

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

TO-252-2L

ꢀ

-ꢀ

100N06

RM100N60LD

Absolute Maximum Ratings (T_C=25ćunless otherwise noted)

Symbol

V_DS

Parameter

Drain-Source Voltage

Gate-Source Voltage

Conditions

Min

Max

Unit

T_C= 25 ഒ

V_GS

100

T_C= 25 ഒ, V_GS= 10 V

T_C= 100 ഒ, V_GS= 10 V

T_C= 25 ഒ, V_GS= 10 V

T_C= 25 ഒ

I_D***

Drain Current ( DC )

I_DM*^,***

P_tot

Drain Current ( Pulsed )

Drain power dissipation

Storage Temperature

120

ഒ

T_stg

-55

150

100

312

T_J

Junction Temperature

Continuous-Source Current

I_S

T_C= 25 ഒ

EAS

Single Pulsed Avalanche Energy VDD=50V , L=1.0mH

Thermal Resistance- Junction to Ambient

Thermal Resistance- Junction to Case

R_θJA**

R_θJC**

ഒ/W

2.5

2021-11/x

REV:O

12 3 4 5 6 7

中文翻译

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