Datasheet > RFP50N05L

RFP50N05L

更新时间： 2024-11-28 22:43:59

品牌	Logo	应用领域
英特矽尔 - INTERSIL		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
6页	55K
描述
50A, 50V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs

阅读下载

中文翻译

获取价格

数据手册
替代型号

如果您发现信息不准确，欢迎纠错

RFP50N05L 数据手册

RFG50N05L, RFP50N05L

Data Sheet

July 1999

File Number 2424.3

50A, 50V, 0.022 Ohm, Logic Level,

N-Channel Power MOSFETs

Features

• 50A, 50V

These are logic-level N-channel power MOSFETs

• r

= 0.022Ω

DS(ON)

manufactured using the MegaFET process. This process,

which uses feature sizes approaching those of LSI

integrated circuits gives optimum utilization of silicon,

resulting in outstanding performance. They were designed

for use with logic-level (5V) driving sources in applications

such as programmable controllers, automotive switching,

switching regulators, switching converters, motor relay

drivers and emitter switches for bipolar transistors. This

performance is accomplished through a special gate oxide

design which provides full rated conductance at gate bias in

the 3V - 5V range, thereby facilitating true on-off power

control directly from integrated circuit supply voltages.

• UIS SOA Rating Curve (Single Pulse)

• Design Optimized for 5V Gate Drive

• Can be Driven Directly from CMOS, NMOS, TTL Circuits

• Compatible with Automotive Drive Requirements

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Majority Carrier Device

Formerly developmental type TA09872.

• Related Literature

Ordering Information

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

PART NUMBER

PACKAGE

TO-247

TO-220AB

BRAND

RFG50N05L

RFP50N05L

Symbol

RFG50N05L

RFP50N05L

NOTE: When ordering, use the entire part number. Add the suffix 9A to

obtain the TO-263AB variant in the tape and reel, i.e., RFP50N05L9A.

Packaging

JEDEC STYLE TO-247

JEDEC TO-220AB

SOURCE

DRAIN

SOURCE

DRAIN

GATE

DRAIN

(BOTTOM

SIDE METAL)

DRAIN (FLANGE)

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

6-212

12 3 4 5 6

中文翻译

下载PDF

RFP50N05L 替代型号

型号	品牌	替代类型	描述	数据表
RFP50N05L	FAIRCHILD	功能相似	50A, 50V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs
STP55NE06L	STMICROELECTRONICS	功能相似	N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET
BUK556-60H	NXP	功能相似	PowerMOS transistor Logic level FET

与RFP50N05L相关器件

型号	品牌	获取价格	描述	数据表
RFP50N05L_04	AUSTIN	获取价格	50A, 50V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs
RFP50N05L9A	FAIRCHILD	获取价格	Power Field-Effect Transistor, 50A I(D), 50V, 0.027ohm, 1-Element, N-Channel, Silicon, Met
RFP50N06	INTERSIL	获取价格	50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs
RFP50N06	FAIRCHILD	获取价格	50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs
RFP50N06	ROCHESTER	获取价格	50A, 60V, 0.022ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
RFP50N06	ONSEMI	获取价格	N 沟道，功率 MOSFET，60V，50A，22mΩ
RFP50N06_NL	ROCHESTER	获取价格	50A, 60V, 0.022ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
RFP50N06-F102	FAIRCHILD	获取价格	Transistor
RFP50N06LE	INTERSIL	获取价格	50A, 60V, 0.022 Ohm, Logic Level N-Channel Power MOSFETs
RFP5P12	MOSPEC	获取价格	P - CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS

与RFP50N05L相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

49
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

38
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

67
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

63

产品中心

服务支持

精选活动

关于我们

帮助中心

RFP50N05L

RFP50N05L 数据手册

RFP50N05L 替代型号

与RFP50N05L相关器件

与RFP50N05L相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

RFP50N05L

RFP50N05L 数据手册

RFP50N05L 替代型号

与RFP50N05L相关器件

与RFP50N05L相关文章

您还可以找

您在本页遇到什么问题？