Datasheet > RFP50N06-F102

RFP50N06-F102

更新时间： 2024-09-13 15:49:35

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
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8页	375K
描述
Transistor

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中文翻译

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技术参数
数据手册

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RFP50N06-F102 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
Base Number Matches：	1

RFP50N06-F102 数据手册

RFG50N06, RFP50N06, RF1S50N06SM

Data Sheet

January 2002

50A, 60V, 0.022 Ohm, N-Channel Power

MOSFETs

Features

• 50A, 60V

These N-Channel power MOSFETs are manufactured using

the MegaFET process. This process, which uses feature

sizes approaching those of LSI integrated circuits gives

optimum utilization of silicon, resulting in outstanding

performance. They were designed for use in applications

such as switching regulators, switching converters, motor

drivers, and relay drivers. These transistors can be operated

directly from integrated circuits.

• r

DS(ON)

= 0.022Ω

• Temperature Compensating PSPICE Model

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• 175 C Operating Temperature

Symbol

Formerly developmental type TA49018.

Ordering Information

PART NUMBER

PACKAGE

BRAND

RFG50N06

TO-247

RFP50N06

TO-220AB

TO-263AB

RFP50N06

F1S50N06

RF1S50N06SM

NOTE: When ordering, use the entire part number. Add the sufﬁx, 9A,

to obtain the TO-263AB variant in tape and reel, i.e. RF1S50N06SM9A.

Packaging

JEDEC STYLE TO-247

JEDEC TO-220AB

SOURCE

DRAIN

SOURCE

DRAIN

GATE

DRAIN

(BOTTOM

SIDE METAL)

DRAIN

(FLANGE)

JEDEC TO-263AB

DRAIN

(FLANGE)

GATE

SOURCE

RFG50N06, RFP50N06, RF1S50N06SM Rev. B

12 3 4 5 6 7 8

中文翻译

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