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RFP70N06 PDF预览

RFP70N06

更新时间: 2024-10-30 22:43:59
品牌 Logo 应用领域
英特矽尔 - INTERSIL 晶体晶体管开关PC局域网
页数 文件大小 规格书
8页 74K
描述
70A, 60V, 0.014 Ohm, N-Channel Power MOSFETs

RFP70N06 数据手册

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RFG70N06, RFP70N06, RF1S70N06SM  
Data Sheet  
July 1999  
File Number 3206.5  
70A, 60V, 0.014 Ohm, N-Channel Power  
MOSFETs  
Features  
• 70A, 60V  
These are N-Channel power MOSFETs manufactured using  
the MegaFET process. This process, which uses feature  
sizes approaching those of LSI circuits, gives optimum  
utilization of silicon, resulting in outstanding performance.  
They were designed for use in applications such as  
switching regulators, switching converters, motor drivers and  
relay drivers. These transistors can be operated directly from  
integrated circuits.  
• r  
= 0.014Ω  
DS(on)  
®
Temperature Compensated PSPICE Model  
• Peak Current vs Pulse Width Curve  
• UIS Rating Curve (Single Pulse)  
o
• 175 C Operating Temperature  
• Related Literature  
Formerly developmental type TA49007.  
- TB334 “Guidelines for Soldering Surface Mount  
Components to PC Boards”  
Ordering Information  
Symbol  
PART NUMBER  
PACKAGE  
BRAND  
RFG70N06  
D
RFG70N06  
TO-247  
RFP70N06  
TO-220AB  
TO-263AB  
RFP70N06  
F1S70N06  
G
RF1S70N06SM  
NOTE: When ordering use the entire part number. Add the suffix 9A to  
obtain the TO-263AB variant in tape and reel, e.g. RF1S70N06SM9A.  
S
Packaging  
JEDEC STYLE TO-247  
JEDEC TO-220AB  
SOURCE  
DRAIN  
SOURCE  
GATE  
DRAIN  
DRAIN  
(BOTTOM  
SIDE METAL)  
GATE  
DRAIN  
(FLANGE)  
JEDEC TO-263AB  
DRAIN  
(FLANGE)  
GATE  
SOURCE  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.  
PSPICE® is a registered trademark of MicroSim Corporation.  
4-474  
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999  

RFP70N06 替代型号

型号 品牌 替代类型 描述 数据表
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