Datasheet > RFP8N20L

RFP8N20L

更新时间： 2024-10-31 22:24:59

品牌	Logo	应用领域
英特矽尔 - INTERSIL		/
页数	文件大小	规格书
5页	42K
描述
8A, 200V, 0.600 Ohm, Logic Level, N-Channel Power MOSFET

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RFP8N20L 数据手册

RFP8N20L

Data Sheet

July 1999

File Number 1514.3

8A, 200V, 0.600 Ohm, Logic Level,

N-Channel Power MOSFET

Features

• 8A, 200V

This N-Channel enhancement mode silicon gate power ﬁeld

effect transistor is speciﬁcally designed for use with logic

level (5V) driving sources in applications such as

programmable controllers, automotive switching and

solenoid drivers. This performance is accomplished through

a special gate oxide design which provides full rated

conduction at gate biases in the 3V to 5V range, thereby

facilitating true on-off power control directly from logic circuit

supply voltages.

• r

= 0.600Ω

DS(ON)

• Design Optimized for 5V Gate Drives

• Can be Driven Directly from QMOS, NMOS,

TTL Circuits

• Compatible with Automotive Drive Requirements

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedence

Formerly developmental type TA09534.

Ordering Information

• Majority Carrier Device

PART NUMBER

PACKAGE

BRAND

RFP8N20L

• Related Literature

RFP8N20L

TO-220AB

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

NOTE: When ordering, include the entire part number.

Symbol

Packaging

JEDEC TO-220AB

SOURCE

DRAIN

GATE

DRAIN (FLANGE)

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

6-278

12 3 4 5

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