Datasheet > RFP8P06LE

RFP8P06LE

更新时间： 2024-09-14 22:26:55

品牌	Logo	应用领域
英特矽尔 - INTERSIL		晶体晶体管开关局域网
页数	文件大小	规格书
8页	106K
描述
8A, 60V, 0.300 Ohm, ESD Rated, Logic Level, P-Channel Power MOSFET

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RFP8P06LE 数据手册

RFD8P06LE, RFD8P06LESM, RFP8P06LE

Data Sheet

July 1999

File Number 4273.1

8A, 60V, 0.300 Ohm, ESD Rated, Logic

Level, P-Channel Power MOSFET

Features

• 8A, 60V

These products are P-Channel power MOSFETs

manufactured using the MegaFET process. This process,

which uses feature sizes approaching those of LSI circuits,

gives optimum utilization of silicon, resulting in outstanding

performance. They were designed for use in applications

such as switching regulators, switching converters, motor

drivers, and relay drivers. These transistors can be operated

directly from integrated circuits.

• r

= 0.300Ω

DS(ON)

• 2kV ESD Protected

• Temperature Compensating PSPICE Model

• PSPICE Thermal Model

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

Formerly developmental type TA49203.

• 175 C Operating Temperature

Ordering Information

Symbol

PART NUMBER

PACKAGE

BRAND

F8P6LE

RFD8P06LE

TO-251AA

RFD8P06LESM

RFP8P06LE

TO-252AA

TO-220AB

F8P6LE

FP8P06LE

NOTE: When ordering, use the entire part number. Add the suffix 9A to

obtain the TO-252AA variant in the tape and reel, i.e.,

RFD8P06LESM9A.

Packaging

JEDEC TO-251AA

JEDEC TO-252AA

DRAIN (FLANGE)

SOURCE

DRAIN

GATE

DRAIN (FLANGE)

GATE

SOURCE

JEDEC TO-220AB

SOURCE

DRAIN

GATE

DRAIN (FLANGE)

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

PSPICE® is a registered trademark of MicroSim Corporation.

7-11

12 3 4 5 6 7 8

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