Datasheet > RFP8P05

RFP8P05

更新时间： 2024-10-31 22:26:55

品牌	Logo	应用领域
英特矽尔 - INTERSIL		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
6页	55K
描述
8A, 50V, 0.300 Ohm, P-Channel Power MOSFETs

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RFP8P05 数据手册

RFD8P05, RFD8P05SM, RFP8P05

Data Sheet

July 1999

File Number 2384.2

8A, 50V, 0.300 Ohm, P-Channel Power

MOSFETs

Features

• 8A, 50V

These products are P-Channel power MOSFETs

manufactured using the MegaFET process. This process,

which uses feature sizes approaching those of LSI circuits,

gives optimum utilization of silicon, resulting in outstanding

performance. They were designed for use in applications

such as switching regulators, switching converters, motor

drivers, and relay drivers. These transistors can be operated

directly from integrated circuits.

• r

= 0.300Ω

DS(ON)

• UIS SOA Rating Curve

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

Formerly developmental type TA09832.

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Ordering Information

PART NUMBER

PACKAGE

BRAND

Symbol

RFD8P05

TO-251AA

D8P05

RFD8P05SM

RFP8P05

TO-252AA

TO-220AB

RFP8P05

NOTE: When ordering, use the entire part number. Add the sufﬁx 9A

to obtain the TO-252AA variant in tape and reel, i.e.,

RFD8P05SM9A.

Packaging

JEDEC TO-220AB

JEDEC TO-251AA

SOURCE

DRAIN

GATE

SOURCE

DRAIN

GATE

DRAIN (FLANGE)

JEDEC TO-252AA

DRAIN (FLANGE)

GATE

SOURCE

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

4-112

12 3 4 5 6

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