Datasheet > RFP8P06E

RFP8P06E

更新时间： 2024-09-14 22:26:55

品牌	Logo	应用领域
英特矽尔 - INTERSIL		晶体晶体管开关局域网
页数	文件大小	规格书
8页	91K
描述
8A, 60V, 0.300 Ohm, P-Channel Power MOSFETs

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

RFP8P06E 数据手册

RFD8P06E, RFD8P06ESM, RFP8P06E

Data Sheet

July 1999

File Number 3937.5

8A, 60V, 0.300 Ohm, P-Channel Power

MOSFETs

Features

• 8A, 60V

These are P-Channel power MOSFETs manufactured using

the MegaFET process. This process, which uses feature

sizes approaching those of LSI integrated circuits gives

optimum utilization of silicon, resulting in outstanding

performance. They were designed for use in applications

such as switching regulators, switching converters, motor

drivers, relay drivers and emitter switches for bipolar

transistors. These transistors can be operated directly from

integrated circuits.

• r

= 0.300Ω

DS(ON)

• Temperature Compensating PSPICE Model

• 2kV ESD Protected

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• 175 C Operating Temperature

• Related Literature

The RFD8P06E, RFD8P06ESM and RFP8P06E incorporate

ESD protection and are designed to withstand 2kV (Human

Body Model) of ESD.

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Symbol

Formerly developmental type TA49044.

Ordering Information

PART NUMBER

PACKAGE

BRAND

RFP8P06E

TO-220AB

RFD8P06ESM

RFD8P06E

TO-252AA

TO-251AA

D8P06E

NOTE: When ordering, use the entire part number. Add the sufﬁx 9A

to obtain the TO-252AA variant in tape and reel, i.e.

RFD8P06ESM9A.

Packaging

JEDEC TO-220AB

JEDEC TO-251AA

SOURCE

DRAIN

GATE

SOURCE

DRAIN

GATE

DRAIN (FLANGE)

JEDEC TO-252AA

DRAIN (FLANGE)

GATE

SOURCE

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

PSPICE® is a registered trademark of MicroSim Corporation.

4-117

12 3 4 5 6 7 8

中文翻译

下载PDF

与RFP8P06E相关器件

型号	品牌	获取价格	描述	数据表
RFP8P06LE	INTERSIL	获取价格	8A, 60V, 0.300 Ohm, ESD Rated, Logic Level, P-Channel Power MOSFET
RFP8P08	HARRIS	获取价格	-8A, -80V AND -100V, 0.400 Ohm, P-CHANNEL POWER MOSFETS
RFP8P10	INTERSIL	获取价格	8A, 100V, 0.400 Ohm, P-Channel Power MOSFET
RFP8P10	HARRIS	获取价格	-8A, -80V AND -100V, 0.400 Ohm, P-CHANNEL POWER MOSFETS
RFPA0133	RFMD	获取价格	3 TO 5 V PROGRAMMABLE GAIN HIGH EFFICIENCY POWER AMPLIFIER
RFPA0133_12	RFMD	获取价格	5V PROGRAMMABLE GAIN HIGH EFFICIENCY POWER AMPLIFIER
RFPA0133PCK-410	RFMD	获取价格	5V PROGRAMMABLE GAIN HIGH EFFICIENCY POWER AMPLIFIER
RFPA0133PCK-411	RFMD	获取价格	5V PROGRAMMABLE GAIN HIGH EFFICIENCY POWER AMPLIFIER
RFPA0133SQ	RFMD	获取价格	5V PROGRAMMABLE GAIN HIGH EFFICIENCY POWER AMPLIFIER
RFPA0133SR	RFMD	获取价格	5V PROGRAMMABLE GAIN HIGH EFFICIENCY POWER AMPLIFIER