Datasheet > RFP7N35

RFP7N35

更新时间： 2024-09-14 22:43:59

品牌	Logo	应用领域
英特矽尔 - INTERSIL		/
页数	文件大小	规格书
4页	51K
描述
7A, 350V and 400V, 0.75 Ohm, N-Channel Power MOSFETs

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RFP7N35 数据手册

RFM7N35, RFM7N40,

RFP7N35, RFP7N40

Semiconductor

7A, 350V and 400V, 0.75 Ohm,

N-Channel Power MOSFETs

July 1998

Features

Description

• 7A, 350V and 400V

• r = 0.75Ω

These are N-Channel enhancement mode silicon gate

power ﬁeld effect transistors designed for applications such

as switching regulators, switching converters, motor drivers,

relay drivers and drivers for high power bipolar switching

transistors requiring high speed and low gate drive power.

These types can be operated directly from integrated

circuits.

DS(ON)

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

Formerly developmental type TA17424.

• Majority Carrier Device

• Related Literature

Symbol

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Ordering Information

PART NUMBER

RFM7N35

PACKAGE

TO-204AA

BRAND

RFM7N35

RFM7N40

TO-204AA

TO-220AB

RFM7N40

RFP7N35

RFP7N40

RFP7N35

RFP7N40

NOTE: When ordering, use the entire part number.

Packaging

JEDEC TO-204AA

JEDEC TO-220AB

DRAIN

(FLANGE)

SOURCE

DRAIN

(TAB)

GATE

SOURCE (PIN 2)

GATE (PIN 1)

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.

File Number 1536.2

5-1

12 3 4

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