Datasheet > RFP6N50

RFP6N50

更新时间： 2024-11-28 22:20:59

品牌	Logo	应用领域
英特矽尔 - INTERSIL		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
4页	36K
描述
6A, 450V and 500V, 1.250 Ohm, N-Channel Power MOSFETs

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数据手册

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RFP6N50 数据手册

RFM6N45, RFP6N45,

RFP6N50

Semiconductor

6A, 450V and 500V, 1.250 Ohm,

N-Channel Power MOSFETs

September 1998

Features

Description

• 6A, 450V and 500V

These are N-Channel enhancement mode silicon gate

power ﬁeld effect transistors speciﬁcally designed for appli-

cations such as switching regulators, switching converters,

motor drivers, relay drivers, and drivers for high power bipo-

lar switching transistors requiring high speed and low gate

drive power. These types can be operated directly from inte-

grated circuits.

[ /Title

(RFM6

N45,

RFP6N4

• r

DS(ON)

= 1.250Ω

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedence

RFP6N5

Formerly developmental type TA17425.

• Majority Carrier Device

/Subject

(6A,

450V

• Related Literature

Symbol

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

and

Ordering Information

500V,

1.250

Ohm, N-

Channel

Power

MOS-

FETs)

/Author

()

PART NUMBER

RFM6N45

PACKAGE

TO-204AA

TO-220AB

BRAND

RFM6N45

RFP6N45

RFP6N50

RFP6N45

RFP6N50

NOTE: When ordering, include the entire part number.

/Key-

Packaging

words

(Harris

Semi-

conduc-

tor, N-

Channel

Power

MOS-

FETs,

TO-

JEDEC TO-204AA

JEDEC TO-220AB

SOURCE

DRAIN

GATE

DRAIN

(FLANGE)

DRAIN

(FLANGE)

SOURCE (PIN 2)

GATE (PIN 1)

204AA,

TO-

220AB)

/Creator

()

/DOCIN

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.

File Number 1494.2

5--1

12 3 4

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