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RFP6N45 PDF预览

RFP6N45

更新时间: 2024-09-12 22:43:59
品牌 Logo 应用领域
英特矽尔 - INTERSIL /
页数 文件大小 规格书
4页 36K
描述
6A, 450V and 500V, 1.250 Ohm, N-Channel Power MOSFETs

RFP6N45 数据手册

 浏览型号RFP6N45的Datasheet PDF文件第2页浏览型号RFP6N45的Datasheet PDF文件第3页浏览型号RFP6N45的Datasheet PDF文件第4页 
RFM6N45, RFP6N45,  
RFP6N50  
Semiconductor  
6A, 450V and 500V, 1.250 Ohm,  
N-Channel Power MOSFETs  
September 1998  
Features  
Description  
• 6A, 450V and 500V  
These are N-Channel enhancement mode silicon gate  
power field effect transistors specifically designed for appli-  
cations such as switching regulators, switching converters,  
motor drivers, relay drivers, and drivers for high power bipo-  
lar switching transistors requiring high speed and low gate  
drive power. These types can be operated directly from inte-  
grated circuits.  
[ /Title  
(RFM6  
N45,  
RFP6N4  
5,  
• r  
DS(ON)  
= 1.250  
• SOA is Power Dissipation Limited  
• Nanosecond Switching Speeds  
• Linear Transfer Characteristics  
• High Input Impedence  
RFP6N5  
0)  
Formerly developmental type TA17425.  
• Majority Carrier Device  
/Subject  
(6A,  
450V  
• Related Literature  
Symbol  
- TB334 “Guidelines for Soldering Surface Mount  
Components to PC Boards”  
D
and  
Ordering Information  
500V,  
1.250  
Ohm, N-  
Channel  
Power  
MOS-  
FETs)  
/Author  
()  
G
PART NUMBER  
RFM6N45  
PACKAGE  
TO-204AA  
TO-204AA  
TO-220AB  
BRAND  
RFM6N45  
RFP6N45  
RFP6N50  
S
RFP6N45  
RFP6N50  
NOTE: When ordering, include the entire part number.  
/Key-  
Packaging  
words  
(Harris  
Semi-  
conduc-  
tor, N-  
Channel  
Power  
MOS-  
FETs,  
TO-  
JEDEC TO-204AA  
JEDEC TO-220AB  
SOURCE  
DRAIN  
GATE  
DRAIN  
(FLANGE)  
DRAIN  
(FLANGE)  
SOURCE (PIN 2)  
GATE (PIN 1)  
204AA,  
TO-  
220AB)  
/Creator  
()  
/DOCIN  
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.  
File Number 1494.2  
Copyright © Harris Corporation 1998  
5--1  

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