Datasheet > IRF830

IRF830

更新时间： 2024-11-22 22:51:35

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		晶体晶体管局域网
页数	文件大小	规格书
8页	94K
描述
N - CHANNEL 500V - 1.35ohm - 4.5A - TO-220 PowerMESH] MOSFET

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IRF830 数据手册

IRF830

N - CHANNEL 500V - 1.35Ω - 4.5A - TO-220

PowerMESH MOSFET

TYPE

IRF830

V_DSS

R_DS(on)

I_D

500 V

< 1.5 Ω

4.5 A

■

TYPICAL R_DS(on)= 1.35 Ω

EXTREMELY HIGH dv/dt CAPABILITY

100% AVALANCHE TESTED

VERY LOW INTRINSIC CAPACITANCES

GATECHARGE MINIMIZED

DESCRIPTION

This power MOSFET is designed using the

company’s consolidated strip layout-based MESH

OVERLAY

process. This technology matches

TO-220

and improves the performances compared with

standardparts from various sources.

APPLICATIONS

■

HIGH CURRENT, HIGH SPEED SWITCHING

SWITH MODE POWER SUPPLIES (SMPS)

DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVER

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

V_DS

Parameter

Value

500

Unit

Drain-source Voltage (V_GS= 0)

Drain- gate Voltage (R_GS= 20 kΩ)

Gate-source Voltage

V_DGR

V_GS

I_D

500

± 20

4.5

Drain Current (continuous) at T_c= 25 ^oC

I_D

Drain Current (continuous) at T_c= 100 C

2.9

I_DM(• )

P_tot

Drain Current (pulsed)

Total Dissipation at T_c= 25 C

100

Derating Factor

0.8

W/^oC

V/ns

^oC

dv/dt(1) Peak Diode Recovery voltage slope

3.5

T_stg

Storage Temperature

-65 to 150

T_j

Max. Operating Junction Temperature

150

(•) Pulse width limited by safe operating area

(1) I_SD≤ 4.5A, di/dt ≤ 75 A/µs, V_DD≤ V_(BR)DSS, Tj ≤ T_JMAX

First Digit of the Datecode Being Z or K Identifies Silicon Characterized in this Datasheet

1/8

August 1998

12 3 4 5 6 7 8

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IRF830 替代型号

型号	品牌	替代类型	描述	数据表
IRF830	VISHAY	功能相似	Power MOSFET
IRF830PBF	VISHAY	功能相似	Power MOSFET
BUZ41A	HARRIS	功能相似	4.5A, 500V, 1.500 Ohm, N-Channel Power MOSFET

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