Datasheet > RFP60P03

RFP60P03

更新时间： 2024-10-30 22:32:03

品牌	Logo	应用领域
英特矽尔 - INTERSIL		晶体晶体管开关局域网
页数	文件大小	规格书
7页	92K
描述
60A, 30V, 0.027 Ohm, P-Channel Power MOSFETs

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RFP60P03 数据手册

RFG60P03, RFP60P03, RF1S60P03SM

Data Sheet

July 1999

File Number 3951.3

60A, 30V, 0.027 Ohm, P-Channel Power

MOSFETs

Features

• 60A, 30V

These P-Channel power MOSFETs are manufactured using

the MegaFET process. This process, which uses feature

sizes approaching those of LSI integrated circuits gives

optimum utilization of silicon, resulting in outstanding

performance. They were designed for use in applications

such as switching regulators, switching converters, motor

drivers and relay drivers. These transistors can be operated

directly from integrated circuits.

• r

= 0.027Ω

DS(ON)

• Temperature Compensating PSPICE Model

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• 175 C Operating Temperature

• Related Literature

Formerly developmental type TA49045.

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Ordering Information

Symbol

PART NUMBER

PACKAGE

BRAND

RFG60P03

TO-247

RFP60P03

TO-220AB

TO-263AB

RFP60P03

F1S60P03

RF1S60P03SM

NOTE: When ordering, use the entire part number. Add the suffix 9A to

obtain the TO-263AB variant in tape and reel, i.e. RF1S60P03SM9A.

Packaging

JEDEC STYLE TO-247

JEDEC TO-220AB

SOURCE

DRAIN

SOURCE

DRAIN

GATE

DRAIN

(FLANGE)

GATE

DRAIN

(BOTTOM

SIDE METAL)

JEDEC TO-263AB

DRAIN

(FLANGE)

GATE

SOURCE

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

PSPICE® is a registered trademark of MicroSim Corporation.

4-140

12 3 4 5 6 7

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