Datasheet > RFP50N06LE

RFP50N06LE

更新时间： 2024-11-28 22:43:59

品牌	Logo	应用领域
英特矽尔 - INTERSIL		晶体晶体管开关局域网
页数	文件大小	规格书
8页	414K
描述
50A, 60V, 0.022 Ohm, Logic Level N-Channel Power MOSFETs

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RFP50N06LE 数据手册

RFG50N06LE, RFP50N06LE, RF1S50N06LESM

Data Sheet

October 1999

File Number 4072.3

50A, 60V, 0.022 Ohm, Logic Level

N-Channel Power MOSFETs

Features

• 50A, 60V

• r = 0.022Ω

These N-Channel enhancement mode power MOSFETs are

manufactured using the latest manufacturing process

technology. This process, which uses feature sizes

approaching those of LSI circuits, gives optimum utilization

of silicon, resulting in outstanding performance. They were

designed for use in applications such as switching

regulators, switching converters, motor drivers, and relay

drivers. These transistors can be operated directly from

integrated circuits.

DS(ON)

• Temperature Compensating PSPICE Model

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• 175 C Operating Temperature

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Formerly developmental type TA49164.

Symbol

Ordering Information

PART NUMBER

PACKAGE

BRAND

FG50N06L

RFG50N06LE

TO-247

RFP50N06LE

TO-220AB

TO-263AB

FP50N06L

F50N06LE

RF1S50N06LESM

NOTE: When ordering, use the entire part number. Add the sufﬁx 9A

to obtain the TO-263AB variant in tape and reel, i.e.

RF1S50N06LESM9A.

Packaging

JEDEC STYLE TO-247

JEDEC TO-220AB

SOURCE

DRAIN

SOURCE

DRAIN

GATE

DRAIN

(BOTTOM

SIDE METAL)

DRAIN (FLANGE)

JEDEC TO-263AB

DRAIN

(FLANGE)

GATE

SOURCE

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

PSPICE® is a registered trademark of MicroSim Corporation.

12 3 4 5 6 7 8

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