是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | TO-220AB | 包装说明: | TO-220AB, 3 PIN |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.42 |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 50 V | 最大漏极电流 (Abs) (ID): | 50 A |
最大漏极电流 (ID): | 50 A | 最大漏源导通电阻: | 0.027 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-220AB |
JESD-30 代码: | R-PSFM-T3 | JESD-609代码: | e3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT APPLICABLE |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 110 W |
最大脉冲漏极电流 (IDM): | 130 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | NO |
端子面层: | Matte Tin (Sn) | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT APPLICABLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
STP55NE06L | STMICROELECTRONICS |
功能相似 |
N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET | |
BUK556-60H | NXP |
功能相似 |
PowerMOS transistor Logic level FET |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
RFP50N05L_04 | AUSTIN |
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50A, 50V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs | |
RFP50N05L9A | FAIRCHILD |
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Power Field-Effect Transistor, 50A I(D), 50V, 0.027ohm, 1-Element, N-Channel, Silicon, Met | |
RFP50N06 | INTERSIL |
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50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs | |
RFP50N06 | FAIRCHILD |
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50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs | |
RFP50N06 | ROCHESTER |
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50A, 60V, 0.022ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | |
RFP50N06 | ONSEMI |
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N 沟道,功率 MOSFET,60V,50A,22mΩ | |
RFP50N06_NL | ROCHESTER |
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50A, 60V, 0.022ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | |
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Transistor | |
RFP50N06LE | INTERSIL |
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50A, 60V, 0.022 Ohm, Logic Level N-Channel Power MOSFETs | |
RFP5P12 | MOSPEC |
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P - CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS |