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RFP50N05L9A PDF预览

RFP50N05L9A

更新时间: 2024-09-24 14:44:27
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 局域网开关脉冲晶体管
页数 文件大小 规格书
6页 161K
描述
Power Field-Effect Transistor, 50A I(D), 50V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN

RFP50N05L9A 技术参数

是否Rohs认证:不符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:TO-220AB, 3 PIN
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.92
Is Samacsys:N外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:50 V
最大漏极电流 (Abs) (ID):50 A最大漏极电流 (ID):50 A
最大漏源导通电阻:0.027 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e0元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):110 W最大脉冲漏极电流 (IDM):130 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

RFP50N05L9A 数据手册

 浏览型号RFP50N05L9A的Datasheet PDF文件第2页浏览型号RFP50N05L9A的Datasheet PDF文件第3页浏览型号RFP50N05L9A的Datasheet PDF文件第4页浏览型号RFP50N05L9A的Datasheet PDF文件第5页浏览型号RFP50N05L9A的Datasheet PDF文件第6页 
RFP50N05L  
Data Sheet  
August 2004  
50A, 50V, 0.022 Ohm, Logic Level,  
N-Channel Power MOSFETs  
Features  
• 50A, 50V  
• r = 0.022Ω  
These are logic-level N-channel power MOSFETs  
DS(ON)  
manufactured using the MegaFET process. This process,  
which uses feature sizes approaching those of LSI  
integrated circuits gives optimum utilization of silicon,  
resulting in outstanding performance. They were designed  
for use with logic-level (5V) driving sources in applications  
such as programmable controllers, automotive switching,  
switching regulators, switching converters, motor relay  
drivers and emitter switches for bipolar transistors. This  
performance is accomplished through a special gate oxide  
design which provides full rated conductance at gate bias in  
the 3V - 5V range, thereby facilitating true on-off power  
control directly from integrated circuit supply voltages.  
• UIS SOA Rating Curve (Single Pulse)  
• Design Optimized for 5V Gate Drive  
• Can be Driven Directly from CMOS, NMOS, TTL Circuits  
• Compatible with Automotive Drive Requirements  
• SOA is Power Dissipation Limited  
• Nanosecond Switching Speeds  
• Linear Transfer Characteristics  
• High Input Impedance  
• Majority Carrier Device  
Formerly developmental type TA09872.  
• Related Literature  
Ordering Information  
- TB334 “Guidelines for Soldering Surface Mount  
Components to PC Boards”  
PART NUMBER  
PACKAGE  
BRAND  
F50N05L  
Symbol  
RFP50N05L  
TO-220AB  
D
NOTE: When ordering, use the entire part number. Add the suffix 9A to  
obtain the TO-263AB variant in the tape and reel, i.e., RFP50N05L9A.  
G
S
Packaging  
JEDEC TO-220AB  
SOURCE  
DRAIN  
GATE  
DRAIN (FLANGE)  
©2004 Fairchild Semiconductor Corporation  
RFP50N05L Rev. C  

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