生命周期: | Active | 包装说明: | , |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.73 | 其他特性: | OPERATING FREQUENCY: 6GHZ |
JESD-609代码: | e4 | 安装特点: | SURFACE MOUNT |
端子数量: | 2 | 最低工作温度: | -55 °C |
封装形状: | RECTANGULAR PACKAGE | 额定功率耗散 (P): | 10 W |
额定温度: | 100 °C | 电阻: | 100 Ω |
电阻器类型: | FIXED RESISTOR | 子类别: | Fixed Resistors |
表面贴装: | YES | 技术: | METAL GLAZE/THICK FILM |
端子面层: | SILVER | 端子形状: | FLAT |
容差: | 5% | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
RFP-10-50TV | ANAREN |
获取价格 |
Flanged Terminations | |
RFP-10-50TVC | ANAREN |
获取价格 |
Flanged Terminations | |
RFP-10-50TVC-S | ANAREN |
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RF/Microwave Termination, 0MHz Min, 4000MHz Max, 50ohm, ROHS COMPLIANT, CERAMIC PACKAGE-1 | |
RFP-10-50TVR | ANAREN |
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Flanged Terminations | |
RFP-10-50TVV | ANAREN |
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RF/Microwave Termination, 0MHz Min, 4000MHz Max, 50ohm | |
RFP-10H50TVC | ANAREN |
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RF/Microwave Termination, 0MHz Min, 4000MHz Max, 50ohm | |
RFP10N12 | GE |
获取价格 |
N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS | |
RFP10N12 | NJSEMI |
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Trans MOSFET N-CH 120V 10A 3-Pin(3+Tab) TO-220AB | |
RFP10N12L | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 120V V(BR)DSS | 10A I(D) | TO-220AB | |
RFP10N15 | GE |
获取价格 |
N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS |