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RFP-10-50TVR

更新时间： 2024-11-18 03:37:07

品牌	Logo	应用领域
安伦 - ANAREN		/
页数	文件大小	规格书
2页	498K
描述
Flanged Terminations

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中文翻译

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数据手册

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RFP-10-50TVR 数据手册

Model RFP-10-50TVR

Flanged Terminations

10 Watts, 50 Ω

General Specifications

Resistive Element:

Thick film

Substrate:

Cover:

Beryllium oxide ceramic

Alumina ceramic

Mounting Flange:

Copper, nickel plated per

QQ-N-290

Lead(s):

99.99% pure silver (.005” thk)

Features

• DC - 4.0 GHz

Electrical Specifications

• 10 Watts

Resistance Value:

Frequency Range:

Power:

50 ohms, 5%

DC - 4.0 GHz

10 Watts

1.25:1

• BeO Ceramic

• Welded Silver Leads

V.S.W.R.:

• Non-Nichrome Resistive

Element

Notes: Tolerance is .010, unless otherwise specified. Operating

temperature is -55°C to +150°C (see chart). Designed to meet or

exceed applicable portions of MIL-E-5400. All dimensions are in

inches. Lead length 0.15” minimum.

• Low VSWR

Specifications subject to change without notice.

• 100% Tested

Outline Drawing

.200

.100

.062

.116 DIA.

.050

.100

.120 MAX.

VER. 12/5/01

Sales Desk USA: Voice: (800) 544-2414 Fax: (315) 432-9121

Sales Desk Europe: Voice: (+44) 23 92 232392 Fax: (+44) 23 92 251369

中文翻译

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RFP10N15	GE	获取价格	N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS
RFP10N15	INTERSIL	获取价格	10A, 150V, 0.300 Ohm, N-Channel Power MOSFETs
RFP10N15	NJSEMI	获取价格	10A 150V 0.300 OHM N-CHANNEL POWER MOSFETS
RFP10N15L	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 150V V(BR)DSS \| 10A I(D) \| TO-220AB
RFP-10N50T	ANAREN	获取价格	RF/Microwave Termination, 0MHz Min, 6000MHz Max, 50ohm