Datasheet > RFP12N10L

RFP12N10L

更新时间： 2024-11-17 22:24:07

品牌	Logo	应用领域
英特矽尔 - INTERSIL		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
5页	42K
描述
12A, 100V, 0.200 Ohm, Logic Level, N-Channel Power MOSFET

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替代型号

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RFP12N10L 数据手册

RFP12N10L

Data Sheet

July 1999

File Number 1512.3

12A, 100V, 0.200 Ohm, Logic Level,

N-Channel Power MOSFET

Features

• 12A, 100V

These are N-Channel enhancement mode silicon gate

power ﬁeld effect transistors speciﬁcally designed for use

with logic level (5V) driving sources in applications such as

programmable controllers, automotive switching and

solenoid drivers. This performance is accomplished through

a special gate oxide design which provides full rated

conduction at gate biases in the 3V to 5V range, thereby

facilitating true on-off power control directly from logic circuit

supply voltages.

• r

= 0.200Ω

DS(ON)

• Design Optimized for 5V Gate Drives

• Can be Driven Directly from QMOS, NMOS,

TTL Circuits

• Compatible with Automotive Drive Requirements

• SOA is Power-Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

Formerly developmental type TA09526.

Ordering Information

• Majority Carrier Device

PART NUMBER

PACKAGE

BRAND

F12N10L

• Related Literature

RFP12N10L

TO-220AB

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards

NOTE: When ordering, include the entire part number.

Symbol

Packaging

JEDEC TO-220AB

SOURCE

DRAIN

GATE

DRAIN

(TAB)

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

6-224

12 3 4 5

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RFP12N10L 替代型号

型号	品牌	替代类型	描述	数据表
RFP50N06	ONSEMI	功能相似	N 沟道，功率 MOSFET，60V，50A，22mΩ
RFP12N10L	ONSEMI	功能相似	N 沟道，逻辑电平，功率 MOSFET，100V，12A，200mΩ
SPW47N60C3	INFINEON	功能相似	Cool MOS™ Power Transistor

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