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RFP14N06 PDF预览

RFP14N06

更新时间: 2024-09-15 22:09:03
品牌 Logo 应用领域
英特矽尔 - INTERSIL 晶体晶体管开关局域网
页数 文件大小 规格书
8页 78K
描述
14A, 60V, 0.100 Ohm, N-Channel Power MOSFET

RFP14N06 数据手册

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RFP14N06  
Data Sheet  
July 1999  
File Number 4002.3  
14A, 60V, 0.100 Ohm, N-Channel Power  
MOSFET  
Features  
• 14A, 60V  
This N-Channel power MOSFET is manufactured using the  
MegaFET process. This process which uses feature sizes  
approaching those of LSI integrated circuits, gives optimum  
utilization of silicon, resulting in outstanding performance. It  
was designed for use in applications such as switching  
regulators, switching convertors, motor drivers, and relay  
drivers. This transistor can be operated directly from  
integrated circuits.  
• r  
= 0.100  
DS(ON)  
®
Temperature Compensating PSPICE Model  
• Peak Current vs Pulse Width Curve  
• UIS Rating Curve  
o
• 175 C Operating Temperature  
• Related Literature  
Formerly developmental type TA09770.  
- TB334 “Guidelines for Soldering Surface Mount  
Components to PC Boards”  
Ordering Information  
Symbol  
PART NUMBER  
PACKAGE  
BRAND  
RFP14N06  
D
RFP14N06  
TO-220AB  
NOTE: When ordering, use the entire part number.  
G
S
Packaging  
TO-220AB  
SOURCE  
DRAIN  
GATE  
DRAIN (FLANGE)  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures  
PSPICE® is a registered trademark of MicroSim Corporation.  
4-492  
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999  

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