Datasheet > RFP14N05L

RFP14N05L

更新时间： 2024-09-15 22:09:03

品牌	Logo	应用领域
英特矽尔 - INTERSIL		/
页数	文件大小	规格书
8页	78K
描述
14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

RFP14N05L 数据手册

RFD14N05L, RFD14N05LSM, RFP14N05L

Data Sheet

April 1999

File Number 2246.3

14A, 50V, 0.100 Ohm, Logic Level,

N-Channel Power MOSFETs

Features

• 14A, 50V

These are N-channel power MOSFETs manufactured using

the MegaFET process. This process, which uses feature

sizes approaching those of LSI integrated circuits, gives

optimum utilization of silicon, resulting in outstanding

performance. They were designed for use in applications

such as switching regulators, switching converters, motor

drivers and relay drivers. This performance is accomplished

through a special gate oxide design which provides full rated

conductance at gate bias in the 3V-5V range, thereby

facilitating true on-off power control directly from logic level

(5V) integrated circuits.

• r

= 0.100Ω

DS(ON)

• Temperature Compensating PSPICE™ Model

• Can be Driven Directly from CMOS, NMOS, and

TTL Circuits

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• 175 C Operating Temperature

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Formerly developmental type TA09870.

Ordering Information

Symbol

PART NUMBER

PACKAGE

BRAND

14N05L

RFD14N05L

TO-251AA

RFD14N05LSM

RFP14N05L

TO-252AA

TO-220AB

14N05L

FP14N05L

NOTE: When ordering, use the entire part number. Add the suffix 9A to

obtain the TO-252AA variant in the tape and reel, i.e., RFD14N05LSM9A.

Packaging

JEDEC TO-251AA

JEDEC TO-252AA

DRAIN (FLANGE)

SOURCE

DRAIN

GATE

DRAIN (FLANGE)

GATE

SOURCE

JEDEC TO-220AB

SOURCE

DRAIN

GATE

DRAIN (FLANGE)

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

PSPICE™ is a trademark of MicroSim Corporation.

6-135

12 3 4 5 6 7 8

中文翻译

下载PDF

与RFP14N05L相关器件

型号	品牌	获取价格	描述	数据表
RFP14N05L_NL	FAIRCHILD	获取价格	Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal
RFP14N06	INTERSIL	获取价格	14A, 60V, 0.100 Ohm, N-Channel Power MOSFET
RFP14N06L	INTERSIL	获取价格	14A, 60V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs
RFP-1500-18-50	ANAREN	获取价格	RF/Microwave Termination, 1805MHz Min, 1880MHz Max, 50ohm
RFP-1500-19-50	ANAREN	获取价格	RF/Microwave Termination, 1930MHz Min, 1990MHz Max, 50ohm
RFP-1500-21-50	ANAREN	获取价格	RF/Microwave Termination, 2110MHz Min, 2170MHz Max, 50ohm
RFP-1500-8-50	ANAREN	获取价格	RF/Microwave Termination, 869MHz Min, 894MHz Max, 50ohm
RFP-1500-9-50	ANAREN	获取价格	RF/Microwave Termination, 925MHz Min, 960MHz Max, 50ohm
RFP-150-100RCGF-S	ANAREN	获取价格	Flanged Resistor 150 Watts, 100Ohms
RFP-150-100RCGN-S	ANAREN	获取价格	Flangeless Resistor 150 Watts, 100Ohms