Datasheet > RFP12P10

RFP12P10

更新时间： 2024-11-05 22:24:07

品牌	Logo	应用领域
英特矽尔 - INTERSIL		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
5页	40K
描述
12A, 80V and 100V, 0.300 Ohm, P-Channel Power MOSFETs

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替代型号

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RFP12P10 数据手册

RFP12P08, RFP12P10

Data Sheet

June 1999

File Number 1495.2

12A, 80V and 100V, 0.300 Ohm, P-Channel

Power MOSFETs

Features

• 12A, 80V and 100V

The RFP12P08, and RFP12P10 are P-Channel

• r

= 0.300Ω

DS(ON)

enhancement mode silicon gate power ﬁeld effect transistors

designed for applications such as switching regulators,

switching convertors, motor drivers, relay drivers, and drivers

for high power bipolar switching transistors requiring high

speed and low gate drive power. These types can be

operated directly from integrated circuits.

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

Formerly developmental type TA17511.

• Majority Carrier Device

• Related Literature

Ordering Information

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

PART NUMBER

RFP12P08

RFP12P10

PACKAGE

TO-220AB

BRAND

RFP12P08

RFP12P10

Symbol

NOTE: When ordering, include the entire part number.

Packaging

TO-220AB

SOURCE

DRAIN

GATE

DRAIN

(TAB)

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

4-161

12 3 4 5

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RFP12P10 替代型号

型号	品牌	替代类型	描述	数据表
MTP12P10	ONSEMI	功能相似	Power MOSFET 12 Amps, 100 Volts P−Channel TO−220
MTP12P10G	ONSEMI	功能相似	Power MOSFET 12 Amps, 100 Volts P−Channel TO−220

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