Datasheet > RFP12N18

RFP12N18

更新时间： 2024-09-15 22:24:07

品牌	Logo	应用领域
英特矽尔 - INTERSIL		/
页数	文件大小	规格书
4页	39K
描述
12A, 180V and 200V, 0.250 Ohm, N-Channel Power MOSFETs

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RFP12N18 数据手册

RFM12N18, RFM12N20,

RFP12N18, RFP12N20

Semiconductor

12A, 180V and 200V, 0.250 Ohm,

N-Channel Power MOSFETs

September 1998

Features

Description

• 12A, 180V and 200V

These are N-Channel enhancement mode silicon gate

power ﬁeld effect transistors designed for applications such

as switching regulators, switching converters, motor drivers,

relay drivers and drivers for high power bipolar switching

transistors requiring high speed and low gate drive power.

[ /Title

(RFM12

N18,

RFM12

N20,

RFP12N

18,

RFP12N

20)

/Subject

(12A,

180V

and

200V,

0.250

• r

= 0.250Ω

DS(ON)

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

These types can be operated directly from integrated cir-

cuits.

Formerly developmental type TA09293.

Ordering Information

PART NUMBER

RFM12N18

PACKAGE

TO-204AA

BRAND

RFM12N18

Symbol

RFM12N20

TO-204AA

TO-220AB

RFM12N20

RFP12N18

RFP12N20

RFP12N18

RFP12N20

NOTE: When ordering, use the entire part number.

Ohm, N-

Channel

Power

MOS-

FETs)

/Author

()

Packaging

JEDEC TO-204AA

JEDEC TO-220AB

SOURCE

DRAIN

(FLANGE)

DRAIN

GATE

(TAB)

/Key-

words

(Harris

Semi-

conduc-

tor, N-

Channel

Power

MOS-

FETs,

TO-

SOURCE (PIN 2)

GATE (PIN 1)

204AA,

TO-

220AB)

/Creator

()

/DOCIN

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.

File Number 1461.2

5-1

12 3 4

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