型号 | 品牌 | 获取价格 | 描述 | 数据表 |
RFP10N15 | GE |
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N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS | |
RFP10N15 | INTERSIL |
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10A, 150V, 0.300 Ohm, N-Channel Power MOSFETs | |
RFP10N15 | NJSEMI |
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10A 150V 0.300 OHM N-CHANNEL POWER MOSFETS | |
RFP10N15L | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 10A I(D) | TO-220AB | |
RFP-10N50T | ANAREN |
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RF/Microwave Termination, 0MHz Min, 6000MHz Max, 50ohm | |
RFP-10N50TV | ANAREN |
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Aluminum Nitride Terminations | |
RFP-10N50TVR | ANAREN |
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Aluminum Nitride Terminations | |
RFP10P03L | HARRIS |
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10A, 30V, 0.200 ohm, Logic Level P-Channel Power MOSFET | |
RFP10P03L | INTERSIL |
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10A, 30V, 0.200 Ohm, Logic Level, P-Channel Power MOSFET | |
RFP10P12 | GE |
获取价格 |
P-CHANNEL ENHANCEMENT - MODE POWER FIELD-EFFECT TRANSISTORS |