Datasheet > RFP10N15

RFP10N15

更新时间： 2024-11-05 22:24:07

品牌	Logo	应用领域
英特矽尔 - INTERSIL		/
页数	文件大小	规格书
5页	44K
描述
10A, 150V, 0.300 Ohm, N-Channel Power MOSFETs

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RFP10N15 数据手册

RFP10N15

Data Sheet

March 1999

File Number 1445.3

10A, 150V, 0.300 Ohm, N-Channel Power

MOSFETs

Features

• 10A, 150V

These are N-channel enhancement-mode silicon-gate

power ﬁeld effect transistors designed for applications such

as switching regulators, switching converters, motor drivers,

relay drivers, and drivers for high-power bipolar switching

transistors requiring high speed and low gate-drive power.

These types can be operated directly from integrated

circuits.

• r

= 0.300Ω

DS(ON)

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Symbol

Formerly developmental type TA09192.

Ordering Information

PART NUMBER

PACKAGE

BRAND

RFP10N15

TO-220AB

NOTE: When ordering, include the entire part number.

Packaging

TO-220AB

SOURCE

DRAIN

GATE

DRAIN (FLANGE)

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

12 3 4 5

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