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RFP10P03L PDF预览

RFP10P03L

更新时间: 2024-11-08 22:24:07
品牌 Logo 应用领域
英特矽尔 - INTERSIL 晶体晶体管开关脉冲局域网
页数 文件大小 规格书
8页 137K
描述
10A, 30V, 0.200 Ohm, Logic Level, P-Channel Power MOSFET

RFP10P03L 数据手册

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RFD10P03L, RFD10P03LSM, RFP10P03L  
Data Sheet  
July 1999  
File Number 3515.2  
10A, 30V, 0.200 Ohm, Logic Level,  
P-Channel Power MOSFET  
Features  
• 10A, 30V  
These products are P-Channel power MOSFETs  
manufactured using the MegaFET process. This process,  
which uses feature sizes approaching those of LSI circuits,  
gives optimum utilization of silicon, resulting in outstanding  
performance. They were designed for use in applications  
such as switching regulators, switching converters, motor  
drivers, and relay drivers. These transistors can be operated  
directly from integrated circuits.  
• r  
= 0.200  
DS(ON)  
®
Temperature Compensating PSPICE Model  
• PSPICE Thermal Model  
• Peak Current vs Pulse Width Curve  
• UIS Rating Curve  
o
• 175 C Operating Temperature  
Formerly developmental type TA49205.  
Symbol  
Ordering Information  
D
PART NUMBER  
PACKAGE  
BRAND  
10P03L  
RFD10P03L  
TO-251AA  
G
RFD10P03LSM  
RFP10P03L  
TO-252AA  
TO-220AB  
10P03L  
S
F10P03L  
NOTE: When ordering, use the entire part number. Add the suffix, 9A,  
to obtain the TO-252AA variant in tape and reel, i.e. RFD10P03LSM9A..  
Packaging  
JEDEC TO-251AA  
JEDEC TO-252AA  
DRAIN (FLANGE)  
SOURCE  
DRAIN  
GATE  
DRAIN (FLANGE)  
GATE  
SOURCE  
JEDEC TO-220AB  
SOURCE  
DRAIN  
GATE  
DRAIN (FLANGE)  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.  
PSPICE® is a registered trademark of MicroSim Corporation.  
7-3  
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999  

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