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RFP12N08 PDF预览

RFP12N08

更新时间: 2024-11-05 22:24:07
品牌 Logo 应用领域
英特矽尔 - INTERSIL /
页数 文件大小 规格书
5页 47K
描述
12A, 80V and 100V, 0.200 Ohm, N-Channel Power MOSFETs

RFP12N08 数据手册

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RFM12N08, RFM12N10, RFP12N08, RFP12N10  
Semiconductor  
Data Sheet  
October 1998  
File Number 1386.2  
12A, 80V and 100V, 0.200 Ohm, N-Channel  
Power MOSFETs  
Features  
• 12A, 80V and 100V  
• r = 0.200  
[ /Title  
(RFM12  
N08,  
RFM12  
N10,  
These are N-Channel enhancement mode silicon gate  
power field effect transistors designed for applications such  
as switching regulators, switching converters, motor drivers,  
relay drivers and drivers for high power bipolar switching  
transistors requiring high speed and low gate drive power.  
These types can be operated directly from integrated  
circuits.  
DS(ON)  
• Related Literature  
- TB334 “Guidelines for Soldering Surface Mount  
Components to PC Boards”  
RFP12  
N08,  
Symbol  
RFP12  
N10)  
D
Formerly developmental type TA09594.  
/Sub-  
ject  
Ordering Information  
G
PART NUMBER  
RFM12N08  
PACKAGE  
TO-204AA  
BRAND  
RFM12N08  
(12A,  
80V and  
100V,  
0.2  
Ohm,  
N-Chan-  
nel  
S
RFM12N10  
TO-204AA  
TO-220AB  
TO-220AB  
RFM12N10  
RFP12N08  
RFP12N10  
RFP12N08  
RFP12N10  
NOTE: When ordering, use the entire part number.  
Power  
MOS-  
FETs) Packaging  
/Author  
()  
/Key-  
JEDEC TO-204AA  
JEDEC TO-220AB  
SOURCE  
DRAIN  
(FLANGE)  
DRAIN  
DRAIN  
GATE  
(TAB)  
words  
(Harris  
Semi-  
conduc-  
tor, N-  
Chan-  
SOURCE (PIN 2)  
GATE (PIN 1)  
nel  
Power  
MOS-  
FETs,  
TO-  
204AA,  
TO-  
220AB)  
/Cre-  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.  
1-800-4-HARRIS | Copyright © Harris Corporation 1998  
1

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