RFP12N06

更新时间： 2024-09-15 22:24:07

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
10页	216K
描述
17A, 60V, 0.071 Ohm, N-Channel, Logic Level UltraFET Power MOSFET

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RFP12N06 数据手册

RFD12N06RLE, RFD12N06RLESM,

RFP12N06RLE

Data Sheet

January 2002

17A, 60V, 0.071 Ohm, N-Channel, Logic

Level UltraFET Power MOSFET

Packaging

Features

• Ultra Low On-Resistance

JEDEC TO-251AA

JEDEC TO-252AA

DRAIN

SOURCE

DRAIN

GATE

- r

= 0.063Ω, V_GS= 10V

= 0.071Ω, V_GS= 5V

DS(ON)

DRAIN

(FLANGE)

GATE

• Simulation Models

SOURCE

- Temperature Compensated PSPICE and SABER

Electrical Models

RFD12N06RLE

RFD12N06RLESM

- Spice and SABER Thermal Impedance Models

JEDEC TO-220AB

- www.fairchildsemi.com

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

SOURCE

DRAIN

GATE

DRAIN (FLANGE)

• Switching Time vs R

Curves

Ordering Information

RFP12N06RLE

PART NUMBER

RFD12N06RLE

PACKAGE

BRAND

12N6LE

TO-251AA

TO-252AA

TO-220AB

Symbol

RFD12N06RLESM

RFP12N06RLE

12N6LE

12N06RLE

NOTE: When ordering, use the entire part number. Add the suffix T to

obtain the TO-252AA variant in tape and reel, i.e. RFD12N06RLESM9A.

Absolute Maximum Ratings

T = 25 C, Unless Otherwise Specified

RFD12N06RLE, RFD12N06RLESM,

RFP12N06RLE

UNITS

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DSS

Drain to Gate Voltage (R

= 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . V

DGR

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

±16

Drain Current

Continuous (T = 25 C, V

= 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Continuous (T = 25 C, V

Continuous (T = 135 C, V

= 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

= 4.5V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . .I

Continuous (T = 135 C, V

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Figure 4

Figures 6, 17, 18

Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

Derate Above 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

0.327

W/ C

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T , T

-55 to 175

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . .T

300

260

pkg

NOTE:

1. T = 25 C to 150 C.

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the

device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

RFD12N06RLE, RFD12N06RLESM, RFP12N06RLE Rev. B

12 3 4 5 6 7...10

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与RFP12N06相关器件

型号	品牌	获取价格	描述	数据表
RFP12N06RLE	FAIRCHILD	获取价格	17A, 60V, 0.071 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
RFP12N06RLE	INTERSIL	获取价格	12A, 60V, 0.135 Ohm, N-Channel, Logic Level, Power MOSFETs
RFP12N08	INTERSIL	获取价格	12A, 80V and 100V, 0.200 Ohm, N-Channel Power MOSFETs
RFP12N08	NJSEMI	获取价格	Trans MOSFET N-CH 80V 12A
RFP12N08L	NJSEMI	获取价格	Trans MOSFET N-CH 80V 12A
RFP12N10	INTERSIL	获取价格	12A, 80V and 100V, 0.200 Ohm, N-Channel Power MOSFETs
RFP12N10	NJSEMI	获取价格	Trans MOSFET N-CH 100V 12A 3-Pin(3+Tab) TO-220AB
RFP12N10L	INTERSIL	获取价格	12A, 100V, 0.200 Ohm, Logic Level, N-Channel Power MOSFET
RFP12N10L	FAIRCHILD	获取价格	12A, 100V, 0.200 Ohm, Logic Level, N-Channel Power MOSFET
RFP12N10L	ONSEMI	获取价格	N 沟道，逻辑电平，功率 MOSFET，100V，12A，200mΩ

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