Datasheet > RF4L10700CB4

RF4L10700CB4

更新时间： 2024-09-16 14:58:11

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
11页	521K
描述
700 W, 40 V, HF to 1 GHz RF power LDMOS transistor

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RF4L10700CB4 数据手册

RF4L10700CB4

Datasheet

700 W, 40 V, HF to 1 GHz RF power LDMOS transistor

Features

OUT

Order code

Frequency

Gain

Efficiency

RF4L10700CB4

915 MHz

40 V

700 W

15 dB

70%

•

High efficiency and linear gain operations

Integrated ESD protection

Internally matched pair transistors in push-pull configuration

Large positive and negative gate-source voltage range for improved class C

operation

D4E

•

Optimized for Doherty applications

Pin connection

Excellent thermal stability, low HCI drift

In compliance with the European directive 2002/95/EC

Connection

Drain A

Drain B

Applications

Source (bottom side)

Gate B

•

ISM

RF energy

Gate A

Description

The RF4L10700CB4 is a 700 W, 40 V, high performance, internally matched LDMOS

FET, designed for multiple ISM and RF energy applications up to 1 GHz frequency

range. It can be used in class AB, B or C for both CW and pulse applications in

narrow-band operation. It is qualified up to 40 V operation.

Product status link

RF4L10700CB4

Product summary

Order code

Marking

RF4L10700CB4

4L10700

D4E

Package

Packing

Tray

Base/bulk quantity

20/100

DS13741 - Rev 2 - September 2021

For further information contact your local STMicroelectronics sales office.

www.st.com

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