Datasheet > RF501BGE2S

RF501BGE2S

更新时间： 2024-11-19 11:08:11

品牌	Logo	应用领域
罗姆 - ROHM		快速恢复二极管
页数	文件大小	规格书
7页	1259K
描述
RF501BGE2S是一般整流用途的快速恢复二极管。

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中文翻译

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RF501BGE2S 数据手册

Super Fast Recovery Diode

RF501BGE2S

Datasheet

Series

Dimensions (Unit : mm)

Land size figure (Unit : mm)

6.0

Standard Fast Recovery

Application

1.6

General rectification

TO-252

2.3 2.3

Features

Structure

Cathode

ROHM : TO-252GE

JEITA : -

1) Low switching loss

Low forward voltage

Open

Anode

Taping specifications (Unit : mm)

Construction

Silicon epitaxial planar type

Absolute maximum ratings (at T_a= 25°C unless otherwise specified)

Parameter

Repetitive peak reverse voltage

Reverse voltage

Symbol

V_RM

V_R

Conditions

Duty≦0.5

Limits

Unit

200

Reverse direct voltage

60Hz half sin waveform, resistive load

I_o

Average rectified foward current

Peak forward surge current

Junction temperature

60Hz half sin waveform,

non-repetitive, T_j=25°C

I_FSM

T_j

150

°C

T_stg

Storage temperature

55 to 150 °C

Electrical characteristics (at T_j= 25°C unless otherwise specified)

Parameter

Forward voltage

Conditions

I_F=5A

Symbol

V_F

Min. Typ. Max. Unit

0.85 0.92

A

V_R=200V

I_R

Reverse current

I_F=0.5A,I_R=1A,Irr=0.25×I_R

Junction to case

Reverse recovery time

trr

Thermal resistance⁽¹⁾

R_th(j-c)

°C / W

(1) Value is guaranteed by design

www.rohm.com

2020/03/10_Rev.001

1/4

12 3 4 5 6 7

中文翻译

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