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RF505B6S_11 PDF预览

RF505B6S_11

更新时间: 2024-11-18 09:50:19
品牌 Logo 应用领域
罗姆 - ROHM 二极管超快速恢复二极管
页数 文件大小 规格书
4页 1126K
描述
Super Fast Recovery Diode

RF505B6S_11 数据手册

 浏览型号RF505B6S_11的Datasheet PDF文件第2页浏览型号RF505B6S_11的Datasheet PDF文件第3页浏览型号RF505B6S_11的Datasheet PDF文件第4页 
Data Sheet  
Super Fast Recovery Diode  
RF505B6S  
Series  
DimensionsUnit : mm)  
Land size figure (Unit : mm)  
6.0  
Standard Fast Recovery  
(2)  
1.6  
Applications  
General rectification  
1.6  
(3)  
(1)  
CPD  
Features  
1)Power mold type. (CPD)  
2)High switching speed  
3)Low Reverse current  
2.3 2.3  
Structure  
(2)  
Production month  
Construction  
Silicon epitaxial planar  
(1)  
(3)  
Taping dimensionsUnit : mm)  
Absolute maximum ratingsTc=25C)  
Parameter  
Conditions  
Limits  
Unit  
Symbol  
VRM  
VR  
Repetitive peak Reverse voltage  
Reverse voltage  
600  
600  
5
V
V
A
Duty0.5  
Direct voltage  
60Hz half sin wave,resistive load  
Average rectified forward current  
Io  
Tc=42C  
60Hz half sin wave, Non-repetitive  
IFSM  
Forward current surge peak  
50  
A
one cycle peak value, Tj=25C  
Junction temperature  
Storage temperature  
150  
C  
C  
Tj  
55 to 150  
Tstg  
Electrical characteristicsTj=25C)  
Parameter  
Conditions  
IF=5.0A  
Min.  
Typ.  
1.3  
Max.  
1.7  
Symbol  
VF  
Unit  
V
Forward voltage  
-
VR=600V  
Reverse current  
IR  
trr  
-
-
-
0.05  
22  
10  
30  
12  
μA  
ns  
IF=0.5A,IR=1A,Irr=0.25×IR  
junction to lead  
Reverse recovery time  
Thermal resistance  
Rth(j-l)  
C/W  
www.rohm.com  
© 2011 ROHM Co., Ltd. All rights reserved.  
2011.05 - Rev.A  
1/3  

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