Data Sheet
AEC-Q101 Qualified
Super Fast Recovery Diode
RF505TF6SFH
Series
Dimensions (Unit : mm)
Structure
Standard Fast Recovery
Applications
General rectification
RF505
TF6S
Features
①
②
1)Low switching loss
2)High current overload capacity
Construction
Silicon epitaxial planer
ROHM : TO220NFM
①
②
Manufacture Year
Manufacture Week
Absolute maximum ratings (Tc=25C)
Parameter
Conditions
Duty≤0.5
Symbol
VRM
VR
Limits
600
600
5
Unit
V
Repetitive peak reverse voltage
Reverse voltage
Direct voltage
V
60Hz half sin wave, Resistance load, Tc=125°C
60Hz half sin wave, Non-repetitive
one cycle peak value, Tj=25°C
Average rectified forward current
Io
A
IFSM
Forward current surge peak
80
A
Junction temperature
Storage temperature
Tj
150
C
C
Tstg
55 to 150
Electrical characteristics (Tj=25C)
Parameter
Conditions
IF=5A
Symbol
VF
Min.
-
Typ.
1.3
0.03
22
Max.
1.7
10
Unit
V
Forward voltage
VR=600V
Reverse current
IR
-
μA
IF=0.5A,IR=1A,Irr=0.25×IR
junction to case
Reverse recovery time
Thermal resistance
trr
-
30
ns
Rth(j-c)
-
-
3
°C/W
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2011.10 - Rev.A
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