Datasheet > RF501BM2SFH_16

RF501BM2SFH_16

更新时间： 2024-11-07 01:23:47

品牌	Logo	应用领域
罗姆 - ROHM		/
页数	文件大小	规格书
7页	957K
描述
Super Fast Recovery Diode

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中文翻译

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RF501BM2SFH_16 数据手册

Super Fast Recovery Diode

Datasheet

RF501BM2SFH

AEC-Q101 Qualified

Series

Dimensions (Unit : mm)

Land Size Figure (Unit : mm)

6.0

Standard Fast Recovery

Application

1.6

General rectification

2.3 2.3

TO-252

Cathode

Features

Structure

ROHM : TO-252

JEITA : SC-63

1) Low switching loss

: Manufacture Date

Low forward voltage

Open

Anode

Taping Dimensions (Unit : mm)

2.0±0.05

φ1.55±0.1

1.550.1

4.0±0.1

8.0±0.1

0.4±0.1

Construction

ꢀꢀꢀꢀꢀ

Silicon epitaxial planar type

φ3.0±0.1

3.00.1

6.8±0.1

8.0±0.1

2.7±0.2

Absolute Maximum Ratings (T_a= 25°C)

Parameter

Symbol

Conditions

Limits

Unit

V_RM

V_R

I_o

Duty≦0.5

200

Repetitive peak reverse voltage

Reverse voltage

Direct voltage

60Hz half sin wave , Resistive load

Average rectified foward current

Forward current surge peak

Operating junction temperature

Storage temperature

60Hz half sin wave ,Non-repetitive at T_j=25°C

I_FSM

T_j

150

°C

T_stg

55 to 150 °C

Electrical Characteristics (T_j= 25°C)

Parameter

Forward voltage

Conditions

I_F=5A

Symbol

V_F

Min. Typ. Max. Unit

0.85 0.92

A

V_R=200V

I_R

Reverse current

0.05

I_F=0.5A, I_R=1A, Irr=0.25×I_R

Junction to case

Reverse recovery time

Thermal resistance

trr

6.0

R_th(j-c)

°C / W

www.rohm.com

2016.02 - Rev.B

1/4

12 3 4 5 6 7

中文翻译

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