Datasheet > QPD1013EVB01

QPD1013EVB01

更新时间： 2024-12-02 01:06:07

品牌	Logo	应用领域
TRIQUINT		/
页数	文件大小	规格书
25页	2408K
描述
150W, 65V, DC â 2.7 GHz, GaN RF Transistor

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QPD1013EVB01 数据手册

QPD1013

150W, 65V, DC – 2.7 GHz, GaN RF Transistor

General Description

The Qorvo QPD1013 is a 150 W (P_3dB) discrete GaN on SiC

HEMT which operates from DC to 2.7 GHz. This is a single

stage unmatched power amplifier transistor in an over-

molded plastic package. The high power and wide

bandwidth of the QPD1013 makes it suitable for many

different applications from DC to 2.7 GHz.

The device is housed in an industry-standard 7.2 x 6.6 mm

surface mount DFN package.

6 Pin DFN (7.2 xꢀ6.6ꢀxꢀ0.9ꢀmm)

Lead-free and ROHS compliant

Product Features

 Frequency: DC to 2.7 GHz

 Output Power (P_3dB): 178 W¹

 Linear Gain: 21.8 dB¹

Evaluation boards are available upon request.

 Typical PAE_3dB: 64.8 %¹

 Operating Voltage: 65 V

 Low thermal resistance package

 CW and Pulse capable

Functional Block Diagram

 7.2 x 6.6 mm package

Note 1: @ 1.8 GHz (Loadpull)

Applications

 Military radar

 Land mobile and military radio communications

 Test instrumentation

 Wideband or narrowband amplifiers

 Jammers

Ordering info

Part No.

ECCN Description

QPD1013S2

QPD1013SQ

QPD1013SR

2 Piece Sample Bag

25 Piece Sample Bag

100 Piece 7” Reel

EAR99

QPD1013EVB01 EAR99 1.2 – 1.9 GHz EVB

Rev. A

Disclaimer: Subject to change without notice

- 1 of 25 -

www.qorvo.com

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