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QPD1022 PDF预览

QPD1022

更新时间: 2024-12-02 01:06:11
品牌 Logo 应用领域
TRIQUINT /
页数 文件大小 规格书
23页 2544K
描述
10W, 32V, DC – 12 GHz, GaN RF Transistor

QPD1022 数据手册

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QPD1022  
10W, 32V, DC 12 GHz, GaN RF Transistor  
General Description  
The Qorvo QPD1022 is a 10 W (P3dB) discrete GaN on SiC  
HEMT which operates from DC to 12 GHz. This wideband  
device is a single stage unmatched power amplifier  
transistor in an over-molded plastic package. The wide  
bandwidth of the QPD1022 makes it suitable for many  
different applications from DC to 12 GHz.  
The device is housed in an industry-standard 3 x 3 mm  
surface mount QFN package.  
16 Pin QFN (3 xꢀ3ꢀxꢀ0.85mm)  
Lead-free and ROHS compliant  
Product Features  
Frequency: DC to 12 GHz  
Output Power (P3dB): 11 W1  
Linear Gain: 24.0 dB1  
Evaluation boards are available upon request.  
Typical PAE3dB: 68.8 %1  
Operating Voltage: 32 V  
Low thermal resistance package  
CW and Pulse capable  
3 x 3 mm package  
Functional Block Diagram  
Note 1: @ 2 GHz (Loadpull)  
Applications  
Military radar  
Civilian radar  
Land mobile and military radio communications  
Test instrumentation  
Wideband or narrowband amplifiers  
Jammers  
Ordering info  
Part No.  
ECCN Description  
QPD1022S2  
QPD1022SQ  
QPD1022SR  
EAR99 2 Piece Sample Bag  
EAR99 25 Piece Sample Bag  
EAR99 100 Piece 7” Reel  
QPD1022EVB01 EAR99 3.1 3.5 GHz EVB  
Rev. A  
Disclaimer: Subject to change without notice  
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© 2017 Qorvo  
www.qorvo.com  

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