Datasheet > QPD1022SQ

QPD1022SQ

更新时间： 2022-02-26 11:15:00

品牌	Logo	应用领域
TRIQUINT		/
页数	文件大小	规格书
23页	2544K
描述
10W, 32V, DC â 12 GHz, GaN RF Transistor

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QPD1022SQ 数据手册

QPD1022

10W, 32V, DC – 12 GHz, GaN RF Transistor

General Description

The Qorvo QPD1022 is a 10 W (P_3dB) discrete GaN on SiC

HEMT which operates from DC to 12 GHz. This wideband

device is a single stage unmatched power amplifier

transistor in an over-molded plastic package. The wide

bandwidth of the QPD1022 makes it suitable for many

different applications from DC to 12 GHz.

The device is housed in an industry-standard 3 x 3 mm

surface mount QFN package.

16 Pin QFN (3 xꢀ3ꢀxꢀ0.85ꢀmm)

Lead-free and ROHS compliant

Product Features

 Frequency: DC to 12 GHz

 Output Power (P_3dB): 11 W¹

 Linear Gain: 24.0 dB¹

Evaluation boards are available upon request.

 Typical PAE_3dB: 68.8 %¹

 Operating Voltage: 32 V

 Low thermal resistance package

 CW and Pulse capable

 3 x 3 mm package

Functional Block Diagram

Note 1: @ 2 GHz (Loadpull)

Applications

 Military radar

 Civilian radar

 Land mobile and military radio communications

 Test instrumentation

 Wideband or narrowband amplifiers

 Jammers

Ordering info

Part No.

ECCN Description

QPD1022S2

QPD1022SQ

QPD1022SR

EAR99 2 Piece Sample Bag

EAR99 25 Piece Sample Bag

EAR99 100 Piece 7” Reel

QPD1022EVB01 EAR99 3.1 – 3.5 GHz EVB

Rev. A

Disclaimer: Subject to change without notice

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